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参数资料
| 型号： | DTC643TU |
| 厂商： | Rohm CO.,LTD. |
| 英文描述： | Digital transistors (built-in resistor) |
| 中文描述： | 数字晶体管（内置电阻） |
| 文件页数： | 2/3页 |
| 文件大小： | 83K |
| 代理商： | DTC643TU |
DTC643TU / DTC643TK
Transistors
!
Electrical characteristics
(Ta=25
°
C)
2/2
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Min.
20
20
12
Typ. Max.
Unit
V
V
V
μ
A
μ
A
Conditions
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
20V
V
EB
=
12V
I
C
/ I
B
=
50mA / 2.5mA
V
CE
=
5V, I
C
=
50mA
V
CE
=
10V, I
E
=
50mA, f
=
100MHz
VI
=
5V, R
L
=
1k
, f
=
1MHz
0.5
0.5
V
CE (sat)
h
FE
R
1
40
4.7
150
2700
6.11
mV
k
820
3.29
f
T
150
0.55
MHz
R
on
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Output "ON" resistance
Transition frequency of the device.
!
Packaging specifications and h
FE
Packaging type
Code
Taping
T106
3000
Taping
T146
3000
Package
Basic ordering unit (pieces)
UMT3
DTC643TU
DTC643TK
SMT3
Type
!
Electrical characteristic curves
100
1000
10000
0.1
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
D
F
Fig.1 DC Current Gain vs.
Collector Current
25
°
C
40
°
C
V
CE
=
5V
100
°
C
1
0.1
10
100
1000
10000
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
Fig.2 Collector-Emitter Saturation
Voltage vs. Collector Current
C
V
C
40
°
C
25
°
C
I
C
/ I
B
=
20 / 1
100
°
C
0.1
1
10
100
1000
0.1
1
10
100
INPUT VOLTAGE : VI (V)
O
o
)
Fig.3
"ON" resistance vs. Input Voltage
Ta
=
25
°
C
f
=
1kHz
R
L
=
1k
h
FE
=
1500 (5V / 50mA)
!
R
on
measurement circuit
Fig.4 Output "ON" resistance (R
on
)
measurement circuit
0
v
0
v
i
v
0
v
I
i
v
(rms)
f=1kHz
v
Input
R
L
=1k
R
on
=
×
R
L
V
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