参数资料
型号: DTDG14
厂商: Rohm CO.,LTD.
元件分类: 参考电压二极管
英文描述: surface mount silicon Zener diodes
中文描述: 表面贴装硅稳压二极管
文件页数: 2/2页
文件大小: 59K
代理商: DTDG14
DTDG14GP
Transistors
!
Electrical characteristics
(Ta = 25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
f
T
R
Min.
50
50
5
300
300
7
80
10
70
70
0.5
580
0.4
13
V
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
720
μ
A
V
CB
=
40V
V
EB
=
4V
V
CE
=
2V, I
C
=
500mA
I
C
/I
B
=
500mA/5mA
V
CE
=
5V, I
E
=
0.1A, f
=
30MHz
V
V
μ
A
μ
A
V
MHz
k
Typ.
Max.
Unit
Conditions
Transition frequency of the device
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current
transfer ratio
Collector-emitter saturation voltage
Transition frequency
Emitter-base resistance
!
Packaging specifications
Package
Packaging type
Taping
MPT3
Code
DTDG14GP
Part No.
T100
1000
Basic ordering
unit (pieces)
!
Electrical characteristic curves
10
5
I
CP
1
2
5
1m
10 20
50 100
2
1
500m
200m
100m
50m
20m
10m
5m
2m
C
C
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
P
W
=
100ms
DC
P
W
=
10ms
Fig.1 Safe operating area
14
Whe18
Single pulse
W
l
×
0.8
t
(Units : mm)
10m 20m 50m 100m200m500m
1
2
5
10
10k
5k
2k
1k
500
200
100
50
20
10
Ta
=
25
°
C
COLLECTOR CURRENT : I
C
(A)
Fig.2 DC current gain vs. collector
current
D
F
V
CE
=
5V
2V
1V
Ta
=
25
°
C
10m
10
5
2
1
500m
200m
100m
50m
20m
10m
20m
50m 100m200m 500m
1
10
2
5
C
C
COLLECTOR CURRENT : I
C
(
A)
Fig.3 Collector-emitter saturation
voltage vs. collector current
50
I
C
/I
B
=
200
100
相关PDF资料
PDF描述
DV-704A HIGH RELIABILITY HYBRID EMI FILTERS
DV-704A-XXX HIGH RELIABILITY HYBRID EMI FILTERS
DV200-27000D HIGH RELIABILITY DC-DC CONVERTERS
DV200-27005D-XXX HIGH RELIABILITY DC-DC CONVERTERS
DV200-27012D-XXX HIGH RELIABILITY DC-DC CONVERTERS
相关代理商/技术参数
参数描述
DTDG14GP 制造商:ROHM 制造商全称:Rohm 功能描述:Digital transistor built in resistor and zener diode Driver 60V, 1A
DTDG14GPT100 功能描述:开关晶体管 - 偏压电阻器 DIGITAL NPN 60V 1A RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel
DTDG23YP 制造商:ROHM 制造商全称:Rohm 功能描述:1A / 60V Digital transistor (with built-in resistors and zener diode)
DTDG23YP_1 制造商:ROHM 制造商全称:Rohm 功能描述:1A / 60V Digital transistor (with built-in resistors and zener diode)
DTDG23YPT100 功能描述:开关晶体管 - 偏压电阻器 NPN 60V 1A RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel