分离式半导体产品 FESB8DT-E3/45品牌、价格、PDF参数
FESB8DT-E3/45 • 品牌、价格
| 元器件型号 |
厂商 |
描述 |
数量 |
价格 |
| FESB8DT-E3/45 |
Vishay General Semiconductor |
DIODE 8A 200V 35NS SGL TO263AB |
0 |
1,000:$0.55830
|
| FESB8BT-E3/45 |
Vishay General Semiconductor |
DIODE 8A 100V 35NS SGL TO263AB |
0 |
1,000:$0.55830
|
| MBR16H45-E3/45 |
Vishay General Semiconductor |
DIODE SCHOTT 10A 45V SGL TO220-2 |
0 |
1,000:$0.55665
|
| MBRF1045HE3/45 |
Vishay General Semiconductor |
DIODE SCHOTT 10A 45V SGL TO220-2 |
0 |
1,000:$0.55485
|
| MBRF1035HE3/45 |
Vishay General Semiconductor |
DIODE SCHOTT 10A 35V SGL TO220-2 |
0 |
1,000:$0.55485
|
| MBRF1035-E3/45 |
Vishay General Semiconductor |
DIODE SCHOTT 10A 35V SGL TO220-2 |
0 |
1,000:$0.55485
|
| MBRB7H60-E3/81 |
Vishay General Semiconductor |
DIODE SCHOTTKY 7.5A 60V TO263AB |
0 |
800:$0.55328
|
| MBRB7H50-E3/81 |
Vishay General Semiconductor |
DIODE SCHOTTKY 7.5A 50V TO263AB |
0 |
800:$0.55328
|
| MBRB7H45-E3/81 |
Vishay General Semiconductor |
DIODE SCHOTTKY 7.5A 45V TO263AB |
0 |
800:$0.55328
|
FESB8DT-E3/45 • PDF参数
| 类别: |
分离式半导体产品
|
| 二极管类型: |
标准
|
| 电压 - (Vr)（最大）: |
200V
|
| 电流 - 平均整流 (Io): |
8A
|
| 电压 - 在 If 时为正向 (Vf)（最大）: |
950mV @ 8A
|
| 速度: |
快速恢复 = 200mA（Io）
|
| 反向恢复时间(trr): |
35ns
|
| 电流 - 在 Vr 时反向漏电: |
10µA @ 200V
|
| 电容@ Vr, F: |
-
|
| 安装类型: |
表面贴装
|
| 封装/外壳: |
TO-263-3，D²Pak（2 引线+接片），TO-263AB
|
| 供应商设备封装: |
TO-263AB
|
| 包装: |
管件
|