分离式半导体产品 SI1305EDL-T1-GE3品牌、价格、PDF参数
SI1305EDL-T1-GE3 • 品牌、价格
| 元器件型号 |
厂商 |
描述 |
数量 |
价格 |
| SI1305EDL-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 8V 860MA SOT323-3 |
0 |
|
| SI1450DH-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 8V 6.04A SC70-6 |
0 |
|
| SI2341DS-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 30V SOT-23 |
0 |
|
| SI3456BDV-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 30V 4.5A 6-TSOP |
0 |
|
| SI3456CDV-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 30V 7.7A 6TSOP |
0 |
|
| SI3879DV-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH/SCHOTTKY 20V 6-TSOP |
0 |
|
| SI4322DY-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 30V 18A 8-SOIC |
0 |
|
| SI4362BDY-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH D-S 30V 8-SOIC |
0 |
|
| SI4453DY-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH D-S 12V 8-SOIC |
0 |
|
| SI4840DY-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH D-S 40V 8-SOIC |
0 |
|
| SI5449DC-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 30V 3.1A 1206-8 |
0 |
|
| SI5463EDC-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 20V 3.8A 1206-8 |
0 |
|
| SI5475DC-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 12V 5.5A 1206-8 |
0 |
|
| SI5480DU-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 30V 12A PPAK CHIPFET |
0 |
|
| SI5482DU-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 30V 12A PPAK CHIPFET |
0 |
|
| SI5858DU-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 20V 6A PPAK CHIPFET |
0 |
|
| SI7358ADP-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH D-S 30V PPAK 8SOIC |
0 |
|
| SI7368DP-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH D-S 20V PPAK 8SOIC |
0 |
|
| SI7407DN-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH D-S 12V PPAK 1212-8 |
0 |
|
| SI7445DP-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH D-S 20V PPAK 1212-8 |
0 |
|
SI1305EDL-T1-GE3 • PDF参数
| 类别: |
分离式半导体产品
|
| FET 型: |
MOSFET P 通道，金属氧化物
|
| FET 特点: |
逻辑电平门
|
| 漏极至源极电压(Vdss): |
8V
|
| 电流 - 连续漏极(Id) @ 25° C: |
860mA
|
| 开态Rds（最大）@ Id, Vgs @ 25° C: |
280 毫欧 @ 1A，4.5V
|
| Id 时的 Vgs(th)（最大）: |
450mV @ 250µA
|
| 闸电荷(Qg) @ Vgs: |
4nC @ 4.5V
|
| 输入电容 (Ciss) @ Vds: |
-
|
| 功率 - 最大: |
290mW
|
| 安装类型: |
表面贴装
|
| 封装/外壳: |
SC-70，SOT-323
|
| 供应商设备封装: |
SC-70-3
|
| 包装: |
带卷 (TR)
|