| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| BTS121A E3045A | Infineon Technologies | MOSFET N CH 100V 22A TO-220AB | 0 | 1,000:$5.17037 2,000:$4.97887 5,000:$4.78738 10,000:$4.69163 25,000:$4.59588 |
| BUZ31 H | Infineon Technologies | MOSFET N-CH 200V 14.5A TO220-3 | 0 | 500:$1.07012 |
| BSC018NE2LSI | Infineon Technologies | MOSFET N-CH 25V 29A TDSON-8 | 5,000 | 1:$2.27000 10:$1.94200 25:$1.74760 100:$1.58590 250:$1.42408 500:$1.22988 1,000:$1.03568 2,500:$0.93858 |
| BSC018NE2LSI | Infineon Technologies | MOSFET N-CH 25V 29A TDSON-8 | 5,000 | 1:$2.27000 10:$1.94200 25:$1.74760 100:$1.58590 250:$1.42408 500:$1.22988 1,000:$1.03568 2,500:$0.93858 |
| BSC018NE2LSI | Infineon Technologies | MOSFET N-CH 25V 29A TDSON-8 | 5,000 | 5,000:$0.84149 10,000:$0.80913 25,000:$0.79294 50,000:$0.77676 |
| IPB054N06N3 G | Infineon Technologies | MOSFET N-CH 60V 80A TO263-3 | 2,000 | 1:$1.99000 10:$1.70900 25:$1.53840 100:$1.39600 250:$1.25356 500:$1.08262 |
| IPB054N06N3 G | Infineon Technologies | MOSFET N-CH 60V 80A TO263-3 | 2,000 | 1,000:$0.82621 2,000:$0.76923 5,000:$0.74074 10,000:$0.71225 25,000:$0.69801 50,000:$0.68376 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 100V |
| 电流 - 连续漏极(Id) @ 25° C: | 22A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 100 毫欧 @ 9.5A，4.5V |
| Id 时的 Vgs(th)（最大）: | 2.5V @ 1mA |
| 闸电荷(Qg) @ Vgs: | - |
| 输入电容 (Ciss) @ Vds: | 1500pF @ 25V |
| 功率 - 最大: | 95W |
| 安装类型: | * |
| 封装/外壳: | * |
| 供应商设备封装: | * |
| 包装: | * |