| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SIRA00DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 60A SO8 PWR PK | 0 | 1:$2.38000 25:$1.83600 100:$1.66600 250:$1.49600 500:$1.29200 1,000:$1.08800 |
| SIA436DJ-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8V D-S SC70-6L | 9 | 1:$0.70000 25:$0.54400 100:$0.48000 250:$0.41600 500:$0.35200 1,000:$0.28000 |
| SIA436DJ-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8V D-S SC70-6L | 9 | 1:$0.70000 25:$0.54400 100:$0.48000 250:$0.41600 500:$0.35200 1,000:$0.28000 |
| SUM110N03-03P-E3 | Vishay Siliconix | MOSFET N-CH 30V 110A D2PAK | 0 | 800:$1.86000 |
| IRLZ44STRRPBF | Vishay Siliconix | MOSFET N-CH 60V 50A D2PAK | 0 | 800:$1.49940 |
| SI7862ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 16V PPAK 8SOIC | 0 | 3,000:$0.87210 |
| SI3465DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 3A 6-TSOP | 0 | 3,000:$0.21750 |
| SI3447BDV-T1-GE3 | Vishay Siliconix | MOSFET P-CH 12V 4.5A 6-TSOP | 0 | 3,000:$0.21750 |
| SI1431DH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 1.7A SOT363 | 0 | 3,000:$0.21750 |
| SI5461EDC-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V CHIPFET | 0 | 3,000:$0.83700 |
| SI5459DU-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V CHIPFET | 0 | 3,000:$0.22475 |
| SI3434DV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 4.6A 6-TSOP | 0 | 3,000:$0.25085 |
| SI4390DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 8.5A 8SOIC | 0 | 2,500:$1.25550 |
| SI8406DB-T2-E1 | Vishay Siliconix | MOSFET N-CH 20V D-S MICROFOOT | 0 | 3,000:$0.21700 6,000:$0.20300 15,000:$0.18900 30,000:$0.17850 75,000:$0.17500 150,000:$0.16800 |
| IRFBC30ASTRLPBF | Vishay Siliconix | MOSFET N-CH 600V 3.6A D2PAK | 0 | 800:$0.83003 |
| SQ2308ES-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 60V TO236 | 0 | 3,000:$0.21700 |
| SI4368DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 17A 8-SOIC | 0 | 2,500:$0.82485 |
| SUD50N06-08H-E3 | Vishay Siliconix | MOSFET N-CH D-S 60V TO252 | 0 | 2,000:$1.71570 |
| IRLZ24SPBF | Vishay Siliconix | MOSFET N-CH 60V 17A D2PAK | 0 | 1,000:$0.90045 |
| SI2333DS-T1-GE3 | Vishay Siliconix | MOSFET P-CH 12V SOT23-3 | 0 | 3,000:$0.22475 |
| SQD25N06-22L-GE3 | Vishay Siliconix | MOSFET N-CH D-S 60V 25A TO252 | 0 | 2,000:$0.89100 |
| SIE862DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V POLARPAK | 0 | 3,000:$0.89100 |
| SQ3426EEV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 7A 6TSOP | 38 | 1:$0.79000 25:$0.55440 100:$0.47520 250:$0.41040 500:$0.35280 1,000:$0.27360 |
| SQ3426EEV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 7A 6TSOP | 38 | 1:$0.79000 25:$0.55440 100:$0.47520 250:$0.41040 500:$0.35280 1,000:$0.27360 |
| SQ3419EEV-T1-GE3 | Vishay Siliconix | MOSFET P-CH 40V 7.4A 6TSOP | 0 | 1:$0.79000 25:$0.55440 100:$0.47520 250:$0.41040 500:$0.35280 1,000:$0.27360 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 30V |
| 电流 - 连续漏极(Id) @ 25° C: | 60A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 1 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）: | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 220nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 11700pF @ 15V |
| 功率 - 最大: | 104W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | PowerPAK? SO-8 |
| 供应商设备封装: | PowerPAK? SO-8 |
| 包装: | 剪切带 (CT) |