元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
IRFBC30ASTRLPBF | Vishay Siliconix | MOSFET N-CH 600V 3.6A D2PAK | 0 | 800:$0.83003 |
SQ2308ES-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 60V TO236 | 0 | 3,000:$0.21700 |
SI4368DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 17A 8-SOIC | 0 | 2,500:$0.82485 |
SUD50N06-08H-E3 | Vishay Siliconix | MOSFET N-CH D-S 60V TO252 | 0 | 2,000:$1.71570 |
IRLZ24SPBF | Vishay Siliconix | MOSFET N-CH 60V 17A D2PAK | 0 | 1,000:$0.90045 |
SI2333DS-T1-GE3 | Vishay Siliconix | MOSFET P-CH 12V SOT23-3 | 0 | 3,000:$0.22475 |
SQD25N06-22L-GE3 | Vishay Siliconix | MOSFET N-CH D-S 60V 25A TO252 | 0 | 2,000:$0.89100 |
SIE862DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V POLARPAK | 0 | 3,000:$0.89100 |
SQ3426EEV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 7A 6TSOP | 38 | 1:$0.79000 25:$0.55440 100:$0.47520 250:$0.41040 500:$0.35280 1,000:$0.27360 |
SQ3426EEV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 7A 6TSOP | 38 | 1:$0.79000 25:$0.55440 100:$0.47520 250:$0.41040 500:$0.35280 1,000:$0.27360 |
SQ3419EEV-T1-GE3 | Vishay Siliconix | MOSFET P-CH 40V 7.4A 6TSOP | 0 | 1:$0.79000 25:$0.55440 100:$0.47520 250:$0.41040 500:$0.35280 1,000:$0.27360 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | MOSFET N 通道,金属氧化物 |
FET 特点: | 标准 |
漏极至源极电压(Vdss): | 600V |
电流 - 连续漏极(Id) @ 25° C: | 3.6A |
开态Rds(最大)@ Id, Vgs @ 25° C: | 2.2 欧姆 @ 2.2A,10V |
Id 时的 Vgs(th)(最大): | 4.5V @ 250µA |
闸电荷(Qg) @ Vgs: | 23nC @ 10V |
输入电容 (Ciss) @ Vds: | 510pF @ 25V |
功率 - 最大: | 74W |
安装类型: | 表面贴装 |
封装/外壳: | TO-263-3,D²Pak(2 引线+接片),TO-263AB |
供应商设备封装: | D2PAK |
包装: | 带卷 (TR) |