| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SI7384DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V PPAK 8SOIC | 0 | 3,000:$0.86400 |
| SI4124DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V 8-SOIC | 0 | 1:$2.35000 25:$1.80920 100:$1.64150 250:$1.47400 500:$1.27300 1,000:$1.07200 |
| SQ7002K-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 320MA SOT23-3 | 0 | 3,000:$0.23200 |
| SI1404BDH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 1.9A SOT363 | 0 | 3,000:$0.21750 |
| SI8406DB-T2-E1 | Vishay Siliconix | MOSFET N-CH 20V D-S MICROFOOT | 98 | 1:$0.77000 25:$0.53920 100:$0.46200 250:$0.39900 500:$0.34300 1,000:$0.26600 |
| SI4124DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V 8-SOIC | 0 | 2,500:$0.90450 5,000:$0.87100 12,500:$0.83750 25,000:$0.82075 62,500:$0.80400 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 30V |
| 电流 - 连续漏极(Id) @ 25° C: | 11A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 8.5 毫欧 @ 18A，10V |
| Id 时的 Vgs(th)（最大）: | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 18nC @ 4.5V |
| 输入电容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 1.8W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | PowerPAK? SO-8 |
| 供应商设备封装: | PowerPAK? SO-8 |
| 包装: | 带卷 (TR) |