元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
SI7888DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V PPAK 8SOIC | 0 | 3,000:$0.89100 |
TN2404K-T1-GE3 | Vishay Siliconix | MOSFET N-CH 240V 200MA TO236 | 0 | 3,000:$0.33350 |
SQ3426EEV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 7A 6TSOP | 0 | 3,000:$0.22320 6,000:$0.20880 15,000:$0.19440 30,000:$0.18360 75,000:$0.18000 150,000:$0.17280 |
SIE848DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V POLARPAK | 0 | 3,000:$1.14750 6,000:$1.10500 15,000:$1.06250 30,000:$1.04125 75,000:$1.02000 |
SI3853DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 1.6A 6-TSOP | 0 | 3,000:$0.33350 |
SI3812DV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 2A 6-TSOP | 0 | 3,000:$0.33350 |
SQ4840EY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V 8SOIC | 0 | 2,500:$1.12455 |
SI1300BDL-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V SC-70-3 | 0 | 1:$0.58000 25:$0.38000 100:$0.31200 250:$0.26000 500:$0.21600 1,000:$0.16000 |
IRLR024TRLPBF | Vishay Siliconix | MOSFET N-CH 60V 14A DPAK | 0 | 3,000:$0.73170 |
SIE878DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH 25V POLARPAK | 0 | 1:$1.80000 25:$1.39040 100:$1.26180 250:$1.13300 500:$0.97850 1,000:$0.82400 |
SQD50P06-15L-GE3 | Vishay Siliconix | MOSFET P-CH 60V 50A TO252 | 0 | 2,000:$1.28250 |
SQD50P04-09L-GE3 | Vishay Siliconix | MOSFET P-CH D-S 40V TO252 | 0 | 2,000:$1.28250 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | MOSFET N 通道,金属氧化物 |
FET 特点: | 逻辑电平门 |
漏极至源极电压(Vdss): | 30V |
电流 - 连续漏极(Id) @ 25° C: | 9.4A |
开态Rds(最大)@ Id, Vgs @ 25° C: | 12 毫欧 @ 12.4A,10V |
Id 时的 Vgs(th)(最大): | 2V @ 250µA |
闸电荷(Qg) @ Vgs: | 10.5nC @ 5V |
输入电容 (Ciss) @ Vds: | - |
功率 - 最大: | 1.8W |
安装类型: | 表面贴装 |
封装/外壳: | PowerPAK? SO-8 |
供应商设备封装: | PowerPAK? SO-8 |
包装: | 带卷 (TR) |