| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SI7840BDP-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V PPAK 8SOIC | 0 | 3,000:$0.80865 |
| SQ1420EEH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 1.6A SC70-6 | 0 | 1:$0.66000 25:$0.46200 100:$0.39600 250:$0.34200 500:$0.29400 1,000:$0.22800 |
| IRF720STRRPBF | Vishay Siliconix | MOSFET N-CH 400V 3.3A D2PAK | 0 | 800:$0.75033 |
| SQ1420EEH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 1.6A SC70-6 | 0 | 3,000:$0.18600 6,000:$0.17400 15,000:$0.16200 30,000:$0.15300 75,000:$0.15000 150,000:$0.14400 |
| SQ1421EEH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 60V 1.6A SC70-6 | 0 | 1:$0.66000 25:$0.46200 100:$0.39600 250:$0.34200 500:$0.29400 1,000:$0.22800 |
| SIHP8N50D-E3 | Vishay Siliconix | MOSFET N-CH 500V 8.7A TO220AB | 50 | 1:$1.90000 25:$1.49760 100:$1.34780 250:$1.17312 500:$1.04832 |
| SIHP8N50D-E3 | Vishay Siliconix | MOSFET N-CH 500V 8.7A TO220AB | 0 | 1,000:$0.74880 2,000:$0.69888 5,000:$0.66394 10,000:$0.63648 25,000:$0.61901 50,000:$0.59904 |
| IRL510STRLPBF | Vishay Siliconix | MOSFET N-CH 100V 5.6A D2PAK | 0 | 800:$0.74534 |
| SIA461DJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 12A SC706L | 3,000 | 1:$0.50000 25:$0.34640 100:$0.29700 250:$0.25652 500:$0.22050 1,000:$0.17100 |
| SIA461DJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 12A SC706L | 3,000 | 1:$0.50000 25:$0.34640 100:$0.29700 250:$0.25652 500:$0.22050 1,000:$0.17100 |
| SIA461DJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 12A SC706L | 0 | 3,000:$0.13950 6,000:$0.13050 15,000:$0.12150 30,000:$0.11475 75,000:$0.11250 150,000:$0.10800 |
| SI1401EDH-T1-GE3 | Vishay Siliconix | MOSFET P-CH F-D 12V SC-70-6 | 0 | 1:$0.50000 25:$0.34640 100:$0.29700 250:$0.25652 500:$0.22050 1,000:$0.17100 |
| SQ1421EEH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 60V 1.6A SC70-6 | 0 | 3,000:$0.18600 6,000:$0.17400 15,000:$0.16200 30,000:$0.15300 75,000:$0.15000 150,000:$0.14400 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 30V |
| 电流 - 连续漏极(Id) @ 25° C: | 11A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 8.5 毫欧 @ 16.5A，10V |
| Id 时的 Vgs(th)（最大）: | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 21nC @ 4.5V |
| 输入电容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 1.8W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | PowerPAK? SO-8 |
| 供应商设备封装: | PowerPAK? SO-8 |
| 包装: | 带卷 (TR) |