| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SIHF8N50L-E3 | Vishay Siliconix | MOSFET N-CH 500V 8A TO220FP | 0 | 1,000:$0.72500 |
| SI1067X-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 1.06A SC89-6 | 0 | 3,000:$0.18600 |
| SI7860DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V PPAK 8SOIC | 0 | 3,000:$0.71145 |
| SQD45P03-12-GE3 | Vishay Siliconix | MOSFET P-CH D-S 30V TO252 | 0 | 2,000:$0.70200 |
| SI1315DL-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V 900MA SC70-3 | 0 | 3,000:$0.10725 |
| SQD50P04-13L-GE3 | Vishay Siliconix | MOSFET P-CH D-S 40V TO252 | 0 | 2,000:$1.28250 |
| SI7457DP-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 100V PPAK 8SOIC | 0 | 3,000:$1.28250 |
| SI7455DP-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 80V PPAK 8SOIC | 0 | 3,000:$1.28250 |
| SIJ482DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 80V 60A SO-8 | 5 | 1:$2.03000 25:$1.56600 100:$1.42100 250:$1.27600 500:$1.10200 1,000:$0.92800 |
| SI7455DP-T1-E3 | Vishay Siliconix | MOSFET P-CH D-S 80V PPAK 8SOIC | 0 | 3,000:$1.28250 |
| SI4866DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 12V 11A 8-SOIC | 0 | 2,500:$0.78300 |
| SI4890DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 11A 8-SOIC | 0 | 2,500:$1.28250 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 标准 |
| 漏极至源极电压(Vdss): | 500V |
| 电流 - 连续漏极(Id) @ 25° C: | 8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 1 欧姆 @ 4A，10V |
| Id 时的 Vgs(th)（最大）: | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 34nC @ 0V |
| 输入电容 (Ciss) @ Vds: | 873pF @ 25V |
| 功率 - 最大: | 40W |
| 安装类型: | 通孔 |
| 封装/外壳: | TO-220-3 整包 |
| 供应商设备封装: | TO-220 整包 |
| 包装: | 带卷 (TR) |