| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SQD40N04-10A-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V 42A TO252 | 0 | 2,000:$1.30680 |
| SUD50P10-43-E3 | Vishay Siliconix | MOSFET P-CH D-S 100V TO252 | 0 | 2,000:$1.28250 |
| SIA418DJ-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 12A SC70-6 | 0 | 3,000:$0.13950 6,000:$0.13050 15,000:$0.12150 30,000:$0.11475 75,000:$0.11250 150,000:$0.10800 |
| IRLZ14STRRPBF | Vishay Siliconix | MOSFET N-CH 60V 10A D2PAK | 0 | 800:$0.77854 |
| SIRA02DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 50A SO-8 | 0 | 1:$2.00000 25:$1.53920 100:$1.39650 250:$1.25400 500:$1.08300 1,000:$0.91200 |
| SI1303DL-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 670MA SOT323-3 | 0 | 3,000:$0.17050 |
| IRF530STRRPBF | Vishay Siliconix | MOSFET N-CH 100V 14A D2PAK | 0 | 800:$0.79514 1,600:$0.71850 2,400:$0.67060 5,600:$0.63707 20,000:$0.61073 40,000:$0.59396 |
| SI7860ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V PPAK 8SOIC | 0 | 3,000:$0.79110 |
| SQD35N05-26L-GE3 | Vishay Siliconix | MOSFET N-CH D-S 55V 30A TO252 | 0 | 2,000:$1.33133 |
| SIRA02DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 50A SO-8 | 0 | 3,000:$0.76950 6,000:$0.74100 15,000:$0.71250 30,000:$0.69825 75,000:$0.68400 |
| SI1307DL-T1-GE3 | Vishay Siliconix | MOSFET P-CH 12V 850MA SOT323-3 | 0 | 3,000:$0.20925 |
| SIA448DJ-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V D-S SC70-6L | 0 | 1:$0.72000 25:$0.50040 100:$0.42900 250:$0.37052 500:$0.31850 1,000:$0.24700 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 40V |
| 电流 - 连续漏极(Id) @ 25° C: | 42A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 10 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）: | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 70nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 2190pF @ 25V |
| 功率 - 最大: | 71W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装: | TO-252，（D-Pak） |
| 包装: | 带卷 (TR) |