元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
SQ3427EEV-T1-GE3 | Vishay Siliconix | MOSFET P-CH 60V 5.5A 6TSOP | 0 | 3,000:$0.22320 6,000:$0.20880 15,000:$0.19440 30,000:$0.18360 75,000:$0.18000 150,000:$0.17280 |
SIJ400DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V PPAK SO-8L | 0 | 3,000:$0.67500 |
SIRA12DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 25A SO8 PWR PK | 0 | 3,000:$0.39200 6,000:$0.37240 15,000:$0.35700 30,000:$0.34720 75,000:$0.33600 |
SI4090DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V D-S 8SOIC | 0 | 2,500:$0.60200 5,000:$0.57190 12,500:$0.54825 25,000:$0.53320 62,500:$0.51600 |
SI4646DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH/SCHOTTKY 30V 8SOIC | 0 | 2,500:$0.42000 |
SI7682DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V PPAK 8SOIC | 0 | 3,000:$0.41860 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | MOSFET P 通道,金属氧化物 |
FET 特点: | 逻辑电平门 |
漏极至源极电压(Vdss): | 60V |
电流 - 连续漏极(Id) @ 25° C: | 5.5A |
开态Rds(最大)@ Id, Vgs @ 25° C: | 82 毫欧 @ 4.5A,10V |
Id 时的 Vgs(th)(最大): | 2.5V @ 250µA |
闸电荷(Qg) @ Vgs: | 32nC @ 10V |
输入电容 (Ciss) @ Vds: | 1125pF @ 30V |
功率 - 最大: | 5W |
安装类型: | 表面贴装 |
封装/外壳: | SC-74,SOT-457 |
供应商设备封装: | 6-TSOP |
包装: | 带卷 (TR) |