| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| IXFB110N60P3 | IXYS | MOSFET N-CH 600V 110A PLUS264 | 90 | 1:$18.22000 25:$15.31800 100:$14.07600 250:$12.83400 500:$12.00600 1,000:$11.01240 2,500:$10.55700 5,000:$10.26720 10,000:$9.93600 |
| IXFH44N50Q3 | IXYS | MOSFET N-CH 500V 44A TO-247 | 55 | 1:$14.26000 10:$12.96000 100:$11.01600 250:$10.04400 500:$9.39600 1,000:$8.61840 2,500:$8.26200 5,000:$8.03520 10,000:$7.77600 |
| IXFH16N120P | IXYS | MOSFET N-CH 1200V 16A TO-247 | 102 | 1:$14.26000 10:$12.96000 100:$11.01600 250:$10.04400 500:$9.39600 1,000:$8.61840 2,500:$8.26200 5,000:$8.03520 |
| IXFK160N30T | IXYS | MOSFET N-CH 160A 300V TO-264 | 573 | 1:$13.51000 25:$11.35920 100:$10.43800 250:$9.51700 500:$8.90300 1,000:$8.16620 2,500:$7.82850 5,000:$7.61360 10,000:$7.36800 |
| IXFX160N30T | IXYS | MOSFET N-CH 160A 300V PLUS247 | 531 | 1:$13.38000 10:$12.16000 100:$10.33600 250:$9.42400 500:$8.81600 1,000:$8.08640 2,500:$7.75200 5,000:$7.53920 10,000:$7.29600 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 标准 |
| 漏极至源极电压(Vdss): | 600V |
| 电流 - 连续漏极(Id) @ 25° C: | 110A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 56 毫欧 @ 55A，10V |
| Id 时的 Vgs(th)（最大）: | 5V @ 8mA |
| 闸电荷(Qg) @ Vgs: | 245nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 18000pF @ 25V |
| 功率 - 最大: | 1890W |
| 安装类型: | 通孔 |
| 封装/外壳: | TO-264-3，TO-264AA |
| 供应商设备封装: | PLUS264? |
| 包装: | 管件 |