分离式半导体产品 PSMN013-100ES,127品牌、价格、PDF参数

PSMN013-100ES,127 • 品牌、价格
元器件型号 厂商 描述 数量 价格
PSMN013-100ES,127 NXP Semiconductors MOSFET N-CH 100V I2PAK 5,000 1:$2.13000
10:$1.92500
25:$1.71880
100:$1.54690
250:$1.37500
500:$1.20312
1,000:$0.99688
2,500:$0.92812
5,000:$0.89375
BUK794R1-40BT,127 NXP Semiconductors MOSFET N-CH 40V 75A TO220AB 2,000 1:$3.97000
10:$3.54200
25:$3.18720
100:$2.90400
250:$2.62072
500:$2.35156
1,000:$1.98324
2,500:$1.88408
5,000:$1.81325
BUK6E4R0-75C,127 NXP Semiconductors MOSFET N-CH TRENCH I2PACK 5,000 1:$3.96000
10:$3.53500
25:$3.18120
100:$2.89830
250:$2.61552
500:$2.34690
1,000:$1.97932
2,500:$1.88036
5,000:$1.80966
PSMN2R8-80BS,118 NXP Semiconductors MOSF N CH 80V 120A D2PAK 229 1:$3.11000
10:$2.78600
25:$2.50560
100:$2.27880
250:$2.06280
PSMN013-100ES,127 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 68A
开态Rds(最大)@ Id, Vgs @ 25° C: 13.9 毫欧 @ 15A,10V
Id 时的 Vgs(th)(最大): 4V @ 1mA
闸电荷(Qg) @ Vgs: 59nC @ 10V
输入电容 (Ciss) @ Vds: 3195pF @ 50V
功率 - 最大: 170W
安装类型: 通孔
封装/外壳: TO-262-3,长引线,I²Pak,TO-262AA
供应商设备封装: I2PAK
包装: 管件