| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| PSMN1R5-30YLC,115 | NXP Semiconductors | MOSFET N-CH 30V 100A LFPAK | 0 | 1,500:$0.54345 3,000:$0.50722 7,500:$0.48186 10,500:$0.46374 37,500:$0.44925 75,000:$0.43476 |
| PSMN015-100B,118 | NXP Semiconductors | MOSFET N-CH 100V 75A SOT404 | 1,748 | 1:$2.30000 10:$2.07400 25:$1.85760 100:$1.67040 250:$1.48320 |
| PSMN015-100B,118 | NXP Semiconductors | MOSFET N-CH 100V 75A SOT404 | 1,748 | 1:$2.30000 10:$2.07400 25:$1.85760 100:$1.67040 250:$1.48320 |
| PSMN130-200D,118 | NXP Semiconductors | MOSFET N-CH 200V 20A SOT428 | 9,495 | 1:$1.78000 10:$1.57200 25:$1.41920 100:$1.24190 250:$1.08908 500:$0.96588 1,000:$0.76384 |
| PSMN130-200D,118 | NXP Semiconductors | MOSFET N-CH 200V 20A SOT428 | 9,495 | 1:$1.78000 10:$1.57200 25:$1.41920 100:$1.24190 250:$1.08908 500:$0.96588 1,000:$0.76384 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 30V |
| 电流 - 连续漏极(Id) @ 25° C: | 100A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 1.55 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）: | 1.95V @ 1mA |
| 闸电荷(Qg) @ Vgs: | 65nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 4044pF @ 15V |
| 功率 - 最大: | 179W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | SC-100，SOT-669，4-LFPAK |
| 供应商设备封装: | LFPAK，Power-SO8 |
| 包装: | 带卷 (TR) |