| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| PSMN4R0-30YL,115 | NXP Semiconductors | MOSFET N-CH 30V 100A SOT669 | 2,437 | 1:$0.97000 10:$0.85700 25:$0.77400 100:$0.67740 250:$0.59404 500:$0.52684 |
| BUK662R5-30C,118 | NXP Semiconductors | MOSFET N-CH TRENCH D2PACK | 4,790 | 1:$2.04000 10:$1.84500 25:$1.65320 100:$1.48640 250:$1.31984 |
| PSMN4R0-30YL,115 | NXP Semiconductors | MOSFET N-CH 30V 100A SOT669 | 2,437 | 1:$0.97000 10:$0.85700 25:$0.77400 100:$0.67740 250:$0.59404 500:$0.52684 |
| BUK662R5-30C,118 | NXP Semiconductors | MOSFET N-CH TRENCH D2PACK | 4,000 | 800:$1.01230 1,600:$0.92901 2,400:$0.86495 5,600:$0.83291 20,000:$0.80088 40,000:$0.78806 80,000:$0.76884 |
| PSMN4R0-30YL,115 | NXP Semiconductors | MOSFET N-CH 30V 100A SOT669 | 1,500 | 1,500:$0.40320 3,000:$0.37632 7,500:$0.35750 10,500:$0.34406 37,500:$0.33331 75,000:$0.32256 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 30V |
| 电流 - 连续漏极(Id) @ 25° C: | 100A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 4 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）: | 2.15V @ 1mA |
| 闸电荷(Qg) @ Vgs: | 36.6nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 2090pF @ 12V |
| 功率 - 最大: | 69W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | SC-100，SOT-669，4-LFPAK |
| 供应商设备封装: | LFPAK，Power-SO8 |
| 包装: | Digi-Reel® |