| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| NP50P03YDG-E1-AY | Renesas Electronics America | MOSFET P-CH -30V 50A 8HSON | 2,500 | 1:$1.89000 10:$1.62000 25:$1.45800 100:$1.32300 250:$1.18800 500:$1.02600 1,000:$0.86400 |
| NP50P03YDG-E1-AY | Renesas Electronics America | MOSFET P-CH -30V 50A 8HSON | 2,500 | 2,500:$0.72900 5,000:$0.70200 12,500:$0.67500 25,000:$0.66150 62,500:$0.64800 |
| NP33N06YDG-E1-AY | Renesas Electronics America | MOSFET N-CH 60V 33A 8HSON | 0 | 2,500:$0.68362 5,000:$0.64944 12,500:$0.62258 25,000:$0.60549 62,500:$0.58596 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET P 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 30V |
| 电流 - 连续漏极(Id) @ 25° C: | 50A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 8.4 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）: | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 96nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 3500pF @ 25V |
| 功率 - 最大: | 1W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | 8-SMD，扁平引线裸焊盘 |
| 供应商设备封装: | 8-HSON |
| 包装: | 剪切带 (CT) |