| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| BSH203,215 | NXP Semiconductors | MOSFET P-CH 30V 470MA SOT23 | 9,464 | 1:$0.50000 10:$0.39400 25:$0.33240 100:$0.27080 250:$0.22424 500:$0.18526 1,000:$0.13875 |
| BSH103,215 | NXP Semiconductors | MOSFET N-CH 30V 0.85A SOT23 | 24,679 | 1:$0.54000 10:$0.37900 25:$0.31120 100:$0.24870 250:$0.18116 500:$0.14714 1,000:$0.11309 |
| BSH108,215 | NXP Semiconductors | MOSFET N-CH 30V 1.9A SOT23 | 9,000 | 3,000:$0.19700 6,000:$0.18400 15,000:$0.17100 30,000:$0.16200 75,000:$0.15900 150,000:$0.15200 |
| BSH103,215 | NXP Semiconductors | MOSFET N-CH 30V 0.85A SOT23 | 24,000 | 3,000:$0.09900 6,000:$0.09300 15,000:$0.08500 30,000:$0.08000 75,000:$0.07100 150,000:$0.06900 |
| BSH103,235 | NXP Semiconductors | MOSFET N-CH 30V 0.85A SOT23 | 0 | 20,000:$0.09200 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET P 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 30V |
| 电流 - 连续漏极(Id) @ 25° C: | 470mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 900 毫欧 @ 280mA，4.5V |
| Id 时的 Vgs(th)（最大）: | 680mV @ 1mA |
| 闸电荷(Qg) @ Vgs: | 2.2nC @ 4.5V |
| 输入电容 (Ciss) @ Vds: | 110pF @ 24V |
| 功率 - 最大: | 417mW |
| 安装类型: | 表面贴装 |
| 封装/外壳: | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装: | TO-236AB |
| 包装: | 剪切带 (CT) |