分离式半导体产品 PHT6N06LT,135品牌、价格、PDF参数

PHT6N06LT,135 • 品牌、价格
元器件型号 厂商 描述 数量 价格
PHT6N06LT,135 NXP Semiconductors MOSFET N-CH 55V 5.5A SOT223 0 4,000:$0.26500
8,000:$0.24700
12,000:$0.23800
28,000:$0.22900
100,000:$0.22000
BSH205,215 NXP Semiconductors MOSFET P-CH 12V 750MA SOT-23 23,980 1:$0.63000
10:$0.55600
25:$0.49160
100:$0.42840
250:$0.37292
500:$0.31744
1,000:$0.25427
PSMN8R0-30YLC,115 NXP Semiconductors MOSFET N-CH 30V 54A LL LFPAK 1,850 1:$0.62000
10:$0.52000
25:$0.45560
100:$0.39000
250:$0.33820
500:$0.28648
PSMN8R0-30YLC,115 NXP Semiconductors MOSFET N-CH 30V 54A LL LFPAK 1,850 1:$0.62000
10:$0.52000
25:$0.45560
100:$0.39000
250:$0.33820
500:$0.28648
PSMN8R0-30YLC,115 NXP Semiconductors MOSFET N-CH 30V 54A LL LFPAK 1,500 1,500:$0.21454
3,000:$0.19561
7,500:$0.18299
10,500:$0.17037
37,500:$0.16154
75,000:$0.15775
150,000:$0.15144
PSMN7R5-25YLC,115 NXP Semiconductors MOSFET N-CH 25V 56A LL LFPAK 2,000 1:$0.62000
10:$0.52000
25:$0.45560
100:$0.39000
250:$0.33820
500:$0.28648
PHT6N06LT,135 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 55V
电流 - 连续漏极(Id) @ 25° C: 2.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 150 毫欧 @ 5A,5V
Id 时的 Vgs(th)(最大): 2V @ 1mA
闸电荷(Qg) @ Vgs: 4.5nC @ 5V
输入电容 (Ciss) @ Vds: 330pF @ 25V
功率 - 最大: 8.3W
安装类型: 表面贴装
封装/外壳: TO-261-4,TO-261AA
供应商设备封装: SC-73
包装: 带卷 (TR)