元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
PHT6N06LT,135 | NXP Semiconductors | MOSFET N-CH 55V 5.5A SOT223 | 0 | 4,000:$0.26500 8,000:$0.24700 12,000:$0.23800 28,000:$0.22900 100,000:$0.22000 |
BSH205,215 | NXP Semiconductors | MOSFET P-CH 12V 750MA SOT-23 | 23,980 | 1:$0.63000 10:$0.55600 25:$0.49160 100:$0.42840 250:$0.37292 500:$0.31744 1,000:$0.25427 |
PSMN8R0-30YLC,115 | NXP Semiconductors | MOSFET N-CH 30V 54A LL LFPAK | 1,850 | 1:$0.62000 10:$0.52000 25:$0.45560 100:$0.39000 250:$0.33820 500:$0.28648 |
PSMN8R0-30YLC,115 | NXP Semiconductors | MOSFET N-CH 30V 54A LL LFPAK | 1,850 | 1:$0.62000 10:$0.52000 25:$0.45560 100:$0.39000 250:$0.33820 500:$0.28648 |
PSMN8R0-30YLC,115 | NXP Semiconductors | MOSFET N-CH 30V 54A LL LFPAK | 1,500 | 1,500:$0.21454 3,000:$0.19561 7,500:$0.18299 10,500:$0.17037 37,500:$0.16154 75,000:$0.15775 150,000:$0.15144 |
PSMN7R5-25YLC,115 | NXP Semiconductors | MOSFET N-CH 25V 56A LL LFPAK | 2,000 | 1:$0.62000 10:$0.52000 25:$0.45560 100:$0.39000 250:$0.33820 500:$0.28648 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | MOSFET N 通道,金属氧化物 |
FET 特点: | 逻辑电平门 |
漏极至源极电压(Vdss): | 55V |
电流 - 连续漏极(Id) @ 25° C: | 2.5A |
开态Rds(最大)@ Id, Vgs @ 25° C: | 150 毫欧 @ 5A,5V |
Id 时的 Vgs(th)(最大): | 2V @ 1mA |
闸电荷(Qg) @ Vgs: | 4.5nC @ 5V |
输入电容 (Ciss) @ Vds: | 330pF @ 25V |
功率 - 最大: | 8.3W |
安装类型: | 表面贴装 |
封装/外壳: | TO-261-4,TO-261AA |
供应商设备封装: | SC-73 |
包装: | 带卷 (TR) |