分离式半导体产品 SI3477DV-T1-GE3品牌、价格、PDF参数

SI3477DV-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI3477DV-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 12V 6-TSOP 3,000 3,000:$0.27550
6,000:$0.25650
15,000:$0.24700
30,000:$0.23750
75,000:$0.23370
150,000:$0.22800
SIA433EDJ-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 20V SC-70-6 5,927 1:$0.79000
25:$0.61200
100:$0.54000
250:$0.46800
500:$0.39600
1,000:$0.31500
SIA433EDJ-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 20V SC-70-6 3,000 3,000:$0.26100
6,000:$0.24300
15,000:$0.23400
30,000:$0.22500
75,000:$0.22140
150,000:$0.21600
SI5424DC-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 1206-8 4,538 1:$0.71000
25:$0.55080
100:$0.48600
250:$0.42120
500:$0.35640
1,000:$0.28350
SI5424DC-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 1206-8 4,538 1:$0.71000
25:$0.55080
100:$0.48600
250:$0.42120
500:$0.35640
1,000:$0.28350
SI5424DC-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 1206-8 3,000 3,000:$0.25467
SI1499DH-T1-GE3 Vishay Siliconix MOSFET P-CH 8V SC-70-6 8,442 1:$0.75000
25:$0.57800
100:$0.51000
250:$0.44200
500:$0.37400
1,000:$0.29750
SI1499DH-T1-GE3 Vishay Siliconix MOSFET P-CH 8V SC-70-6 8,442 1:$0.75000
25:$0.57800
100:$0.51000
250:$0.44200
500:$0.37400
1,000:$0.29750
SI3477DV-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 12V
电流 - 连续漏极(Id) @ 25° C: 8A
开态Rds(最大)@ Id, Vgs @ 25° C: 17.5 毫欧 @ 9A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 90nC @ 10V
输入电容 (Ciss) @ Vds: 2600pF @ 6V
功率 - 最大: 4.2W
安装类型: 表面贴装
封装/外壳: 6-TSOP(0.065",1.65mm 宽)
供应商设备封装: 6-TSOP
包装: 带卷 (TR)