| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| IPB017N06N3 G | Infineon Technologies | MOSFET N-CH 60V 180A TO263-7 | 2,000 | 1,000:$2.15194 2,000:$2.04435 5,000:$1.95980 10,000:$1.90600 25,000:$1.84452 |
| BUZ31 H3045A | Infineon Technologies | MOSFET N-CH 200V 14.5A TO263 | 1,990 | 1:$2.14000 10:$1.83500 25:$1.65120 100:$1.49820 250:$1.34532 500:$1.16186 |
| BUZ31 H3045A | Infineon Technologies | MOSFET N-CH 200V 14.5A TO263 | 1,990 | 1:$2.14000 10:$1.83500 25:$1.65120 100:$1.49820 250:$1.34532 500:$1.16186 |
| BUZ31 H3045A | Infineon Technologies | MOSFET N-CH 200V 14.5A TO263 | 1,000 | 1,000:$0.88668 2,000:$0.82553 5,000:$0.79495 10,000:$0.76438 25,000:$0.74909 50,000:$0.73380 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 标准 |
| 漏极至源极电压(Vdss): | 60V |
| 电流 - 连续漏极(Id) @ 25° C: | 180A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 1.7 毫欧 @ 100A，10V |
| Id 时的 Vgs(th)（最大）: | 4V @ 196µA |
| 闸电荷(Qg) @ Vgs: | 275nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 23000pF @ 30V |
| 功率 - 最大: | 250W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | TO-263-7，D²Pak（6 引线+接片），TO-263CB |
| 供应商设备封装: | PG-TO263-7 |
| 包装: | 带卷 (TR) |