| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SI1050X-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 8V SC-89-6 | 5,757 | 1:$0.61000 25:$0.42360 100:$0.36300 250:$0.31352 500:$0.26950 1,000:$0.20900 |
| SI1304BDL-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V SC-70-3 | 4,735 | 1:$0.52000 25:$0.36560 100:$0.31350 250:$0.27076 500:$0.23276 1,000:$0.18050 |
| SI1304BDL-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V SC-70-3 | 4,735 | 1:$0.52000 25:$0.36560 100:$0.31350 250:$0.27076 500:$0.23276 1,000:$0.18050 |
| SI1304BDL-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V SC-70-3 | 3,000 | 3,000:$0.14725 6,000:$0.13775 15,000:$0.12825 30,000:$0.12113 75,000:$0.11875 150,000:$0.11400 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 8V |
| 电流 - 连续漏极(Id) @ 25° C: | - |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 86 毫欧 @ 1.34A，4.5V |
| Id 时的 Vgs(th)（最大）: | 900mV @ 250µA |
| 闸电荷(Qg) @ Vgs: | 11.6nC @ 5V |
| 输入电容 (Ciss) @ Vds: | 585pF @ 4V |
| 功率 - 最大: | 236mW |
| 安装类型: | 表面贴装 |
| 封装/外壳: | SOT-563，SOT-666 |
| 供应商设备封装: | SC-89-6 |
| 包装: | 剪切带 (CT) |