| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| IPD320N20N3 G | Infineon Technologies | MOSFET N-CH 200V 34A TO252-3 | 12,218 | 1:$3.09000 10:$2.65200 25:$2.38640 100:$2.16560 250:$1.94460 500:$1.67942 1,000:$1.41424 |
| BSZ0901NS | Infineon Technologies | MOSFET N-CH 30V S308 | 5,000 | 5,000:$0.91377 10,000:$0.87863 25,000:$0.86105 50,000:$0.84348 |
| IPD320N20N3 G | Infineon Technologies | MOSFET N-CH 200V 34A TO252-3 | 10,000 | 2,500:$1.19326 5,000:$1.14907 12,500:$1.10488 25,000:$1.08278 62,500:$1.06068 |
| BSZ16DN25NS3 G | Infineon Technologies | MOSFET N-CH 250V 10.9A 8TSDSON | 8,796 | 1:$2.43000 10:$2.08100 25:$1.87240 100:$1.69910 250:$1.52572 500:$1.31766 1,000:$1.10960 2,500:$1.00558 |
| IPD110N12N3 G | Infineon Technologies | MOSFET N-CH 120V 75A TO252-3 | 2,500 | 2,500:$0.89680 5,000:$0.86359 12,500:$0.83038 25,000:$0.81377 62,500:$0.79716 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 标准 |
| 漏极至源极电压(Vdss): | 200V |
| 电流 - 连续漏极(Id) @ 25° C: | 34A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 32 毫欧 @ 34A，10V |
| Id 时的 Vgs(th)（最大）: | 4V @ 90µA |
| 闸电荷(Qg) @ Vgs: | 29nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 2350pF @ 100V |
| 功率 - 最大: | 136W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装: | PG-TO252-3 |
| 包装: | 剪切带 (CT) |