| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| BSC889N03MS G | Infineon Technologies | MOSFET N-CH 30V 44A TDSON-8 | 9,987 | 1:$1.06000 10:$0.91800 25:$0.82120 100:$0.72450 250:$0.62792 500:$0.53130 1,000:$0.42263 2,500:$0.38640 |
| BSC889N03MS G | Infineon Technologies | MOSFET N-CH 30V 44A TDSON-8 | 9,987 | 1:$1.06000 10:$0.91800 25:$0.82120 100:$0.72450 250:$0.62792 500:$0.53130 1,000:$0.42263 2,500:$0.38640 |
| BSC889N03MS G | Infineon Technologies | MOSFET N-CH 30V 44A TDSON-8 | 5,000 | 5,000:$0.32603 10,000:$0.31395 25,000:$0.30188 50,000:$0.29705 125,000:$0.28980 |
| BSP296 L6433 | Infineon Technologies | MOSFET N-CH 100V 1.1A SOT-223 | 6,718 | 1:$0.90000 10:$0.77700 25:$0.69520 100:$0.61350 250:$0.53172 500:$0.44990 1,000:$0.35788 |
| BSS205N H6327 | Infineon Technologies | MOSFET N-CH 20V 2.5A SOT23 | 8,646 | 1:$0.55000 10:$0.38600 25:$0.31920 100:$0.25750 250:$0.18540 500:$0.14936 1,000:$0.11588 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 30V |
| 电流 - 连续漏极(Id) @ 25° C: | 44A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 9.1 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）: | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 20nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 1500pF @ 15V |
| 功率 - 最大: | 28W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | 8-PowerTDFN |
| 供应商设备封装: | PG-TDSON-8 |
| 包装: | Digi-Reel® |