| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| FDD86326 | Fairchild Semiconductor | MOSFET N-CH 80V TRENCH DPAK | 12,500 | 2,500:$0.74250 5,000:$0.71500 12,500:$0.68750 25,000:$0.67650 62,500:$0.66000 |
| FDMS7580 | Fairchild Semiconductor | MOSFET N-CH 25V 15A POWER56 | 4,930 | 1:$1.77000 10:$1.56300 25:$1.41120 100:$1.23480 250:$1.08292 500:$0.96040 1,000:$0.75950 |
| FDMS7580 | Fairchild Semiconductor | MOSFET N-CH 25V 15A POWER56 | 4,930 | 1:$1.77000 10:$1.56300 25:$1.41120 100:$1.23480 250:$1.08292 500:$0.96040 1,000:$0.75950 |
| FDMS7580 | Fairchild Semiconductor | MOSFET N-CH 25V 15A POWER56 | 3,000 | 3,000:$0.68600 6,000:$0.65170 15,000:$0.62720 30,000:$0.60760 75,000:$0.58800 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 80V |
| 电流 - 连续漏极(Id) @ 25° C: | 8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 23 毫欧 @ 8A，10V |
| Id 时的 Vgs(th)（最大）: | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 19nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 1035pF @ 50V |
| 功率 - 最大: | 3.1W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装: | D-Pak |
| 包装: | 带卷 (TR) |