分离式半导体产品 DMN4800LSSL-13品牌、价格、PDF参数

DMN4800LSSL-13 • 品牌、价格
元器件型号 厂商 描述 数量 价格
DMN4800LSSL-13 Diodes Inc MOSFET N-CH 30V 8A SO-8 8,205 1:$0.49000
10:$0.41200
25:$0.36120
100:$0.30900
250:$0.26800
500:$0.22700
1,000:$0.17500
2,500:$0.16000
DMN4800LSSL-13 Diodes Inc MOSFET N-CH 30V 8A SO-8 8,205 1:$0.49000
10:$0.41200
25:$0.36120
100:$0.30900
250:$0.26800
500:$0.22700
1,000:$0.17500
2,500:$0.16000
DMN4800LSSL-13 Diodes Inc MOSFET N-CH 30V 8A SO-8 7,500 2,500:$0.15500
5,000:$0.14500
12,500:$0.13500
25,000:$0.12800
62,500:$0.12500
125,000:$0.12000
DMN65D8LW-7 Diodes Inc MOSFET N CH 60V 300MA SOT323 5,892 1:$0.59000
10:$0.45900
25:$0.38760
100:$0.31590
250:$0.26164
500:$0.21612
1,000:$0.16188
DMN65D8LW-7 Diodes Inc MOSFET N CH 60V 300MA SOT323 5,892 1:$0.59000
10:$0.45900
25:$0.38760
100:$0.31590
250:$0.26164
500:$0.21612
1,000:$0.16188
DMN65D8LW-7 Diodes Inc MOSFET N CH 60V 300MA SOT323 3,000 3,000:$0.14438
6,000:$0.13563
15,000:$0.12688
30,000:$0.11638
75,000:$0.11200
150,000:$0.10763
DMP2018LFK-7 Diodes Inc MOSFET P-CH 20V 9.2A 6-DFN 4,903 1:$0.45000
10:$0.38300
25:$0.33560
100:$0.28740
250:$0.24924
500:$0.21112
1,000:$0.16275
DMN4800LSSL-13 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 8A
开态Rds(最大)@ Id, Vgs @ 25° C: 14 毫欧 @ 8A,10V
Id 时的 Vgs(th)(最大): 1.6V @ 250µA
闸电荷(Qg) @ Vgs: 8.7nC @ 5V
输入电容 (Ciss) @ Vds: 798pF @ 10V
功率 - 最大: 1.46W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: Digi-Reel®