| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SI2302DS,215 | NXP Semiconductors | MOSFET N-CH 20V 2.5A SOT23 | 9,000 | 3,000:$0.13000 6,000:$0.12200 15,000:$0.11400 30,000:$0.10400 75,000:$0.10000 150,000:$0.09700 |
| SI2304DS,215 | NXP Semiconductors | MOSFET N-CH 30V 1.7A SOT23 | 7,822 | 1:$0.53000 10:$0.41200 25:$0.34760 100:$0.28340 250:$0.23472 500:$0.19390 1,000:$0.14523 |
| SI2304DS,215 | NXP Semiconductors | MOSFET N-CH 30V 1.7A SOT23 | 7,822 | 1:$0.53000 10:$0.41200 25:$0.34760 100:$0.28340 250:$0.23472 500:$0.19390 1,000:$0.14523 |
| SI2304DS,215 | NXP Semiconductors | MOSFET N-CH 30V 1.7A SOT23 | 6,000 | 3,000:$0.13000 6,000:$0.12200 15,000:$0.11400 30,000:$0.10400 75,000:$0.10000 150,000:$0.09700 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 20V |
| 电流 - 连续漏极(Id) @ 25° C: | 2.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 85 毫欧 @ 3.6A，4.5V |
| Id 时的 Vgs(th)（最大）: | 650mV @ 1mA |
| 闸电荷(Qg) @ Vgs: | 10nC @ 4.5V |
| 输入电容 (Ciss) @ Vds: | 230pF @ 10V |
| 功率 - 最大: | 830mW |
| 安装类型: | 表面贴装 |
| 封装/外壳: | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装: | TO-236AB |
| 包装: | 带卷 (TR) |