元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
BSS84AKV,115 | NXP Semiconductors | MOSFET P-CH 50V SOT6 | 0 | 8,000:$0.09600 |
BSS84AKS,115 | NXP Semiconductors | MOSFET P-CH 50V 160MA 6-TSSOP | 3,000 | 3,000:$0.10200 6,000:$0.09700 15,000:$0.08800 30,000:$0.08300 75,000:$0.07400 150,000:$0.07100 |
BSS84AKS,115 | NXP Semiconductors | MOSFET P-CH 50V 160MA 6-TSSOP | 5,994 | 1:$0.56000 10:$0.39300 25:$0.32280 100:$0.25780 250:$0.18776 500:$0.15250 1,000:$0.11721 |
BSS84AKS,115 | NXP Semiconductors | MOSFET P-CH 50V 160MA 6-TSSOP | 5,994 | 1:$0.56000 10:$0.39300 25:$0.32280 100:$0.25780 250:$0.18776 500:$0.15250 1,000:$0.11721 |
PMDT290UCE,115 | NXP Semiconductors | MOSFET NCH DUAL 20V 800MA SOT666 | 0 | 4,000:$0.11300 |
PMDT290UNE,115 | NXP Semiconductors | MOSFET NCH DUAL 20V 800MA SOT666 | 0 | 4,000:$0.11300 |
PMDT670UPE,115 | NXP Semiconductors | MOSFET PCH DUAL 20V 550MA SOT666 | 0 | 4,000:$0.11300 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | 2 个 P 沟道(双) |
FET 特点: | 逻辑电平门 |
漏极至源极电压(Vdss): | 50V |
电流 - 连续漏极(Id) @ 25° C: | 170mA |
开态Rds(最大)@ Id, Vgs @ 25° C: | 7.5 欧姆 @ 100mA,10V |
Id 时的 Vgs(th)(最大): | 2.1V @ 250µA |
闸电荷(Qg) @ Vgs: | 0.35nC @ 5V |
输入电容 (Ciss) @ Vds: | 36pF @ 25V |
功率 - 最大: | 500mW |
安装类型: | 表面贴装 |
封装/外壳: | SOT-563,SOT-666 |
供应商设备封装: | SOT-666 |
包装: | 带卷 (TR) |