元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
SI7904DN-T1-GE3 | Vishay Siliconix | MOSFET DUAL N-CH D-S 20V 1212-8 | 0 | 3,000:$0.67200 |
SI7214DN-T1-GE3 | Vishay Siliconix | MOSFET DUAL N-CH D-S 30V 1212-8 | 0 | 3,000:$0.67200 |
SI7228DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V PWRPAK 1212-8 | 0 | 3,000:$0.61600 |
SIZ720DT-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V POWERPAIR | 0 | 3,000:$0.60900 |
SIZ710DT-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V POWERPAIR | 5 | 1:$1.63000 25:$1.29000 100:$1.16100 250:$1.01052 500:$0.90300 1,000:$0.70950 |
SIZ710DT-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V POWERPAIR | 5 | 1:$1.63000 25:$1.29000 100:$1.16100 250:$1.01052 500:$0.90300 1,000:$0.70950 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | 2 个 N 沟道(双) |
FET 特点: | 逻辑电平门 |
漏极至源极电压(Vdss): | 20V |
电流 - 连续漏极(Id) @ 25° C: | 5.3A |
开态Rds(最大)@ Id, Vgs @ 25° C: | 30 毫欧 @ 7.7A,4.5V |
Id 时的 Vgs(th)(最大): | 1V @ 935µA |
闸电荷(Qg) @ Vgs: | 15nC @ 4.5V |
输入电容 (Ciss) @ Vds: | - |
功率 - 最大: | 1.3W |
安装类型: | 表面贴装 |
封装/外壳: | PowerPAK? 1212-8 双 |
供应商设备封装: | PowerPAK? 1212-8 Dual |
包装: | 带卷 (TR) |