| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SI4567DY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 40V 8-SOIC | 0 | 2,500:$0.27695 |
| SI3911DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH DUAL 20V 6TSOP | 0 | 3,000:$0.27550 |
| SI5906DU-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 30V 6A PPAK FET | 0 | 1:$0.77000 25:$0.59520 100:$0.52500 250:$0.45500 500:$0.38500 1,000:$0.30625 |
| SI5906DU-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 30V 6A PPAK FET | 0 | 1:$0.77000 25:$0.59520 100:$0.52500 250:$0.45500 500:$0.38500 1,000:$0.30625 |
| SI5906DU-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 30V 6A PPAK FET | 0 | 3,000:$0.25375 6,000:$0.23625 15,000:$0.22750 30,000:$0.21875 |
| SI4214DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 0 | 2,500:$0.25375 |
| SI3529DV-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 40V 6-TSOP | 0 | 3,000:$0.21750 |
| SI3529DV-T1-E3 | Vishay Siliconix | MOSFET N/P-CH 40V 6-TSOP | 0 | 3,000:$0.21750 |
| SI1970DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH DUAL 30V SC70-6 | 0 | 3,000:$0.21750 |
| SI1988DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V DUAL SC-70-6 | 0 | 1:$0.66000 25:$0.51000 100:$0.45000 250:$0.39000 500:$0.33000 1,000:$0.26250 |
| SI1988DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V DUAL SC-70-6 | 0 | 1:$0.66000 25:$0.51000 100:$0.45000 250:$0.39000 500:$0.33000 1,000:$0.26250 |
| SI1988DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V DUAL SC-70-6 | 0 | 3,000:$0.21750 6,000:$0.20250 15,000:$0.19500 30,000:$0.18750 75,000:$0.18450 150,000:$0.18000 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | N 和 P 沟道 |
| FET 特点: | 标准 |
| 漏极至源极电压(Vdss): | 40V |
| 电流 - 连续漏极(Id) @ 25° C: | 5A，4.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 60 毫欧 @ 4.1A，10V |
| Id 时的 Vgs(th)（最大）: | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 12nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 355pF @ 20V |
| 功率 - 最大: | 2.75W，2.95W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装: | 8-SOICN |
| 包装: | 带卷 (TR) |