元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
SI7222DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V 1212-8 PPAK | 190 | 1:$2.00000 25:$1.53920 100:$1.39650 250:$1.25400 500:$1.08300 1,000:$0.91200 |
SI7222DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V 1212-8 PPAK | 0 | 3,000:$0.76950 6,000:$0.74100 15,000:$0.71250 30,000:$0.69825 75,000:$0.68400 |
SI5908DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 1206-8 | 151 | 1:$1.52000 25:$1.20000 100:$1.08000 250:$0.94000 500:$0.84000 1,000:$0.66000 |
SI5908DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 1206-8 | 151 | 1:$1.52000 25:$1.20000 100:$1.08000 250:$0.94000 500:$0.84000 1,000:$0.66000 |
SI5908DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 1206-8 | 0 | 3,000:$0.56000 6,000:$0.53200 15,000:$0.51000 30,000:$0.49600 75,000:$0.48000 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | 2 个 N 沟道(双) |
FET 特点: | 标准 |
漏极至源极电压(Vdss): | 40V |
电流 - 连续漏极(Id) @ 25° C: | 6A |
开态Rds(最大)@ Id, Vgs @ 25° C: | 42 毫欧 @ 5.7A,10V |
Id 时的 Vgs(th)(最大): | 1.6V @ 250µA |
闸电荷(Qg) @ Vgs: | 29nC @ 10V |
输入电容 (Ciss) @ Vds: | 700pF @ 20V |
功率 - 最大: | 17.8W |
安装类型: | 表面贴装 |
封装/外壳: | PowerPAK? 1212-8 双 |
供应商设备封装: | PowerPAK? 1212-8 Dual |
包装: | 剪切带 (CT) |