元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
SI4906DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V 8-SOIC | 502 | 1:$1.00000 25:$0.78920 100:$0.71010 250:$0.61804 500:$0.55230 1,000:$0.43395 |
SI7909DN-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 12V 5.3A 1212-8 | 0 | |
SI4906DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V 8-SOIC | 0 | 2,500:$0.36820 5,000:$0.34979 12,500:$0.33532 25,000:$0.32612 62,500:$0.31560 |
SI3552DV-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH D-S 30V 6-TSOP | 0 | 1:$0.92000 25:$0.71400 100:$0.63000 250:$0.54600 500:$0.46200 1,000:$0.36750 |
SI3552DV-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH D-S 30V 6-TSOP | 0 | 1:$0.92000 25:$0.71400 100:$0.63000 250:$0.54600 500:$0.46200 1,000:$0.36750 |
SI7901EDN-T1-GE3 | Vishay Siliconix | MOSFET DUAL P-CH D-S 20V 1212-8 | 0 | |
SI6983DQ-T1-GE3 | Vishay Siliconix | MOSFET P-CH DUAL G-S 20V 8TSSOP | 0 | |
SI6969DQ-T1-GE3 | Vishay Siliconix | MOSFET P-CH DUAL G-S 12V 8TSSOP | 0 | |
SI6969BDQ-T1-GE3 | Vishay Siliconix | MOSFET P-CH DUAL G-S 12V 8TSSOP | 0 | |
SI6967DQ-T1-GE3 | Vishay Siliconix | MOSFET P-CH DUAL G-S 8V 8TSSOP | 0 | |
SI6966EDQ-T1-GE3 | Vishay Siliconix | MOSFET N-CH DUAL G-S 20V 8TSSOP | 0 | |
SI6966DQ-T1-GE3 | Vishay Siliconix | MOSFET N-CH DUAL G-S 20V 8TSSOP | 0 | |
SI6955ADQ-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 30V 8-TSSOP | 0 | |
SI3552DV-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH D-S 30V 6-TSOP | 0 | 3,000:$0.30450 6,000:$0.28350 15,000:$0.27300 30,000:$0.26250 75,000:$0.25830 150,000:$0.25200 |
SI5980DU-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V PPAK CHIPFET | 432 | 1:$0.84000 25:$0.64600 100:$0.57000 250:$0.49400 500:$0.41800 1,000:$0.33250 |
SI5980DU-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V PPAK CHIPFET | 432 | 1:$0.84000 25:$0.64600 100:$0.57000 250:$0.49400 500:$0.41800 1,000:$0.33250 |
SI6933DQ-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 30V 8-TSSOP | 0 | |
SI5980DU-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V PPAK CHIPFET | 0 | 3,000:$0.27550 6,000:$0.25650 15,000:$0.24700 30,000:$0.23750 75,000:$0.23370 150,000:$0.22800 |
SI3585DV-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 6-TSOP | 740 | 1:$0.84000 25:$0.64600 100:$0.57000 250:$0.49400 500:$0.41800 1,000:$0.33250 |
SI5975DC-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 12V 3.1A CHIPFET | 0 | |
SI5943DU-T1-GE3 | Vishay Siliconix | MOSFET DUAL P-CH 12V 6A 8PWRPAK | 0 | |
SI5935DC-T1-GE3 | Vishay Siliconix | MOSFET DUAL P-CH 20V 1206-8 | 0 | |
SI5933DC-T1-GE3 | Vishay Siliconix | MOSFET DUAL P-CH 20V 2.7A 1206-8 | 0 | |
SI5915DC-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 8V 3.4A 1206-8 | 0 | |
SI5915BDC-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V CHIPFET 1206-8 | 0 | |
SI5905BDC-T1-GE3 | Vishay Siliconix | MOSFET DUAL P-CH D-S 8V 1206-8 | 0 | |
SI4940DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH DUAL 40V 8-SOIC | 0 | |
SI4908DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH DUAL 40V 5A 8-SOIC | 0 | |
SI4834BDY-T1-GE3 | Vishay Siliconix | MOSFET DUAL N-CH 30V 5.7A 8-SOIC | 0 | |
SI4830ADY-T1-GE3 | Vishay Siliconix | MOSFET DUAL N-CH 30V 5.7A 8-SOIC | 0 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | 2 个 N 沟道(双) |
FET 特点: | 标准 |
漏极至源极电压(Vdss): | 40V |
电流 - 连续漏极(Id) @ 25° C: | 6.6A |
开态Rds(最大)@ Id, Vgs @ 25° C: | 39 毫欧 @ 5A,10V |
Id 时的 Vgs(th)(最大): | 2.2V @ 250µA |
闸电荷(Qg) @ Vgs: | 22nC @ 10V |
输入电容 (Ciss) @ Vds: | 625pF @ 20V |
功率 - 最大: | 3.1W |
安装类型: | 表面贴装 |
封装/外壳: | 8-SOIC(0.154",3.90mm 宽) |
供应商设备封装: | 8-SOICN |
包装: | 剪切带 (CT) |