| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| DMC2700UDM-7 | Diodes Inc | MOSFET N/P-CH 20V SOT26 | 5,013 | 1:$0.61000 10:$0.51500 25:$0.45120 100:$0.38630 250:$0.33500 500:$0.28376 1,000:$0.21875 |
| DMN4031SSD-13 | Diodes Inc | MOSFET DL N-CH 40V 5.2A SO-8 | 9,220 | 1:$0.62000 10:$0.52500 25:$0.46040 100:$0.39400 250:$0.34172 500:$0.28942 1,000:$0.22313 |
| DMN4031SSD-13 | Diodes Inc | MOSFET DL N-CH 40V 5.2A SO-8 | 9,220 | 1:$0.62000 10:$0.52500 25:$0.46040 100:$0.39400 250:$0.34172 500:$0.28942 1,000:$0.22313 |
| DMG4932LSD-13 | Diodes Inc | MOSFET 2N-CH 30V 9.5A SO8 | 3,085 | 1:$0.64000 10:$0.53600 25:$0.46920 100:$0.40170 250:$0.34840 500:$0.29510 1,000:$0.22750 |
| DMG4932LSD-13 | Diodes Inc | MOSFET 2N-CH 30V 9.5A SO8 | 3,085 | 1:$0.64000 10:$0.53600 25:$0.46920 100:$0.40170 250:$0.34840 500:$0.29510 1,000:$0.22750 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | N 和 P 沟道 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 20V |
| 电流 - 连续漏极(Id) @ 25° C: | 1.34A，1.14A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 400 毫欧 @ 600mA，4.5V |
| Id 时的 Vgs(th)（最大）: | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 0.74nC @ 4.5V |
| 输入电容 (Ciss) @ Vds: | 60.67pF @ 16V |
| 功率 - 最大: | 1.12W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | SOT-23-6 |
| 供应商设备封装: | SOT-26 |
| 包装: | 剪切带 (CT) |