元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
2N7002BKV,115 | NXP Semiconductors | MOSFET N-CH 60V 340MA SOT666 | 10,910 | 1:$0.42000 10:$0.32600 25:$0.27480 100:$0.22380 250:$0.18540 500:$0.15314 1,000:$0.11470 |
PMGD290XN,115 | NXP Semiconductors | MOSFET N-CH TRENCH DL 20V SOT363 | 318,000 | 3,000:$0.11900 6,000:$0.11200 15,000:$0.10400 30,000:$0.09600 75,000:$0.09200 150,000:$0.08900 |
PMGD290XN,115 | NXP Semiconductors | MOSFET N-CH TRENCH DL 20V SOT363 | 318,690 | 1:$0.48000 10:$0.37800 25:$0.31880 100:$0.25990 250:$0.21528 500:$0.17784 1,000:$0.13320 |
PMGD290XN,115 | NXP Semiconductors | MOSFET N-CH TRENCH DL 20V SOT363 | 318,690 | 1:$0.48000 10:$0.37800 25:$0.31880 100:$0.25990 250:$0.21528 500:$0.17784 1,000:$0.13320 |
PMGD400UN,115 | NXP Semiconductors | MOSFET N-CH TRENCH DL 30V SOT363 | 9,000 | 3,000:$0.11900 6,000:$0.11200 15,000:$0.10400 30,000:$0.09600 75,000:$0.09200 150,000:$0.08900 |
PMGD400UN,115 | NXP Semiconductors | MOSFET N-CH TRENCH DL 30V SOT363 | 12,680 | 1:$0.48000 10:$0.37800 25:$0.31880 100:$0.25990 250:$0.21528 500:$0.17784 1,000:$0.13320 |
PMGD400UN,115 | NXP Semiconductors | MOSFET N-CH TRENCH DL 30V SOT363 | 9,000 | 3,000:$0.09504 6,000:$0.08928 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | 2 个 N 沟道(双) |
FET 特点: | 逻辑电平门 |
漏极至源极电压(Vdss): | 60V |
电流 - 连续漏极(Id) @ 25° C: | 340mA |
开态Rds(最大)@ Id, Vgs @ 25° C: | 1.6 欧姆 @ 500mA,10V |
Id 时的 Vgs(th)(最大): | 2.1V @ 250µA |
闸电荷(Qg) @ Vgs: | 0.6nC @ 4.5V |
输入电容 (Ciss) @ Vds: | 50pF @ 10V |
功率 - 最大: | 350mW |
安装类型: | 表面贴装 |
封装/外壳: | SOT-563,SOT-666 |
供应商设备封装: | SOT-666 |
包装: | 剪切带 (CT) |