分离式半导体产品 2N7002BKV,115品牌、价格、PDF参数

2N7002BKV,115 • 品牌、价格
元器件型号 厂商 描述 数量 价格
2N7002BKV,115 NXP Semiconductors MOSFET N-CH 60V 340MA SOT666 10,910 1:$0.42000
10:$0.32600
25:$0.27480
100:$0.22380
250:$0.18540
500:$0.15314
1,000:$0.11470
PMGD290XN,115 NXP Semiconductors MOSFET N-CH TRENCH DL 20V SOT363 318,000 3,000:$0.11900
6,000:$0.11200
15,000:$0.10400
30,000:$0.09600
75,000:$0.09200
150,000:$0.08900
PMGD290XN,115 NXP Semiconductors MOSFET N-CH TRENCH DL 20V SOT363 318,690 1:$0.48000
10:$0.37800
25:$0.31880
100:$0.25990
250:$0.21528
500:$0.17784
1,000:$0.13320
PMGD290XN,115 NXP Semiconductors MOSFET N-CH TRENCH DL 20V SOT363 318,690 1:$0.48000
10:$0.37800
25:$0.31880
100:$0.25990
250:$0.21528
500:$0.17784
1,000:$0.13320
PMGD400UN,115 NXP Semiconductors MOSFET N-CH TRENCH DL 30V SOT363 9,000 3,000:$0.11900
6,000:$0.11200
15,000:$0.10400
30,000:$0.09600
75,000:$0.09200
150,000:$0.08900
PMGD400UN,115 NXP Semiconductors MOSFET N-CH TRENCH DL 30V SOT363 12,680 1:$0.48000
10:$0.37800
25:$0.31880
100:$0.25990
250:$0.21528
500:$0.17784
1,000:$0.13320
PMGD400UN,115 NXP Semiconductors MOSFET N-CH TRENCH DL 30V SOT363 9,000 3,000:$0.09504
6,000:$0.08928
2N7002BKV,115 • PDF参数
类别: 分离式半导体产品
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 340mA
开态Rds(最大)@ Id, Vgs @ 25° C: 1.6 欧姆 @ 500mA,10V
Id 时的 Vgs(th)(最大): 2.1V @ 250µA
闸电荷(Qg) @ Vgs: 0.6nC @ 4.5V
输入电容 (Ciss) @ Vds: 50pF @ 10V
功率 - 最大: 350mW
安装类型: 表面贴装
封装/外壳: SOT-563,SOT-666
供应商设备封装: SOT-666
包装: 剪切带 (CT)