分离式半导体产品 SI7913DN-T1-GE3品牌、价格、PDF参数

SI7913DN-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI7913DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 1212-8 PPAK 12,000 3,000:$0.71550
6,000:$0.68900
15,000:$0.66250
30,000:$0.64925
75,000:$0.63600
SI4204DY-T1-GE3 Vishay Siliconix MOSFET N-CH 8-SOIC 2,500 2,500:$0.82350
5,000:$0.79300
12,500:$0.76250
25,000:$0.74725
62,500:$0.73200
SI4204DY-T1-GE3 Vishay Siliconix MOSFET N-CH 8-SOIC 3,070 1:$2.14000
25:$1.64720
100:$1.49450
250:$1.34200
500:$1.15900
1,000:$0.97600
SI4204DY-T1-GE3 Vishay Siliconix MOSFET N-CH 8-SOIC 3,070 1:$2.14000
25:$1.64720
100:$1.49450
250:$1.34200
500:$1.15900
1,000:$0.97600
SI4904DY-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 8-SOIC 2,500 2,500:$0.97200
5,000:$0.93600
12,500:$0.90000
25,000:$0.88200
62,500:$0.86400
SI4904DY-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 8-SOIC 3,194 1:$2.52000
25:$1.94400
100:$1.76400
250:$1.58400
500:$1.36800
1,000:$1.15200
SI4904DY-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 8-SOIC 3,194 1:$2.52000
25:$1.94400
100:$1.76400
250:$1.58400
500:$1.36800
1,000:$1.15200
SI7913DN-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: 2 个 P 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 5A
开态Rds(最大)@ Id, Vgs @ 25° C: 37 毫欧 @ 7.4A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 24nC @ 4.5V
输入电容 (Ciss) @ Vds: -
功率 - 最大: 1.3W
安装类型: 表面贴装
封装/外壳: PowerPAK? 1212-8 双
供应商设备封装: PowerPAK? 1212-8 Dual
包装: 带卷 (TR)