| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SI7913DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 1212-8 PPAK | 12,000 | 3,000:$0.71550 6,000:$0.68900 15,000:$0.66250 30,000:$0.64925 75,000:$0.63600 |
| SI4204DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8-SOIC | 2,500 | 2,500:$0.82350 5,000:$0.79300 12,500:$0.76250 25,000:$0.74725 62,500:$0.73200 |
| SI4204DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8-SOIC | 3,070 | 1:$2.14000 25:$1.64720 100:$1.49450 250:$1.34200 500:$1.15900 1,000:$0.97600 |
| SI4204DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8-SOIC | 3,070 | 1:$2.14000 25:$1.64720 100:$1.49450 250:$1.34200 500:$1.15900 1,000:$0.97600 |
| SI4904DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 40V 8-SOIC | 2,500 | 2,500:$0.97200 5,000:$0.93600 12,500:$0.90000 25,000:$0.88200 62,500:$0.86400 |
| SI4904DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 40V 8-SOIC | 3,194 | 1:$2.52000 25:$1.94400 100:$1.76400 250:$1.58400 500:$1.36800 1,000:$1.15200 |
| SI4904DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 40V 8-SOIC | 3,194 | 1:$2.52000 25:$1.94400 100:$1.76400 250:$1.58400 500:$1.36800 1,000:$1.15200 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | 2 个 P 沟道（双） |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 20V |
| 电流 - 连续漏极(Id) @ 25° C: | 5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 37 毫欧 @ 7.4A，4.5V |
| Id 时的 Vgs(th)（最大）: | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 24nC @ 4.5V |
| 输入电容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 1.3W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | PowerPAK? 1212-8 双 |
| 供应商设备封装: | PowerPAK? 1212-8 Dual |
| 包装: | 带卷 (TR) |