元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
SI1025X-T1-GE3 | Vishay Siliconix | MOSFET P-CH 60V 190MA SC-89 | 9,091 | 1:$0.61000 25:$0.42360 100:$0.36300 250:$0.31352 500:$0.26950 1,000:$0.20900 |
SI1965DH-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 12V 1.3A SC70-6 | 0 | 3,000:$0.17050 6,000:$0.15950 15,000:$0.14850 30,000:$0.14025 75,000:$0.13750 150,000:$0.13200 |
SI1539DL-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 30V SC70-6 | 5,850 | 1:$0.63000 25:$0.44280 100:$0.37950 250:$0.32776 500:$0.28176 1,000:$0.21850 |
SI1539DL-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 30V SC70-6 | 5,850 | 1:$0.63000 25:$0.44280 100:$0.37950 250:$0.32776 500:$0.28176 1,000:$0.21850 |
SI5513CDC-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 1206-8 | 0 | 3,000:$0.20925 6,000:$0.19575 15,000:$0.18225 30,000:$0.17213 75,000:$0.16875 150,000:$0.16200 |
SI5513CDC-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 1206-8 | 2,237 | 1:$0.74000 25:$0.51960 100:$0.44550 250:$0.38476 500:$0.33076 1,000:$0.25650 |
SIA533EDJ-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 12V 4.5A SC70-6 | 3,000 | 3,000:$0.20925 6,000:$0.19575 15,000:$0.18225 30,000:$0.17213 75,000:$0.16875 150,000:$0.16200 |
SIS902DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 75V 1212-8 PPAK | 6,745 | 1:$0.90000 25:$0.69720 100:$0.61500 250:$0.53300 500:$0.45100 1,000:$0.35875 |
SI7232DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V 1212-8 PPAK | 3,000 | 3,000:$0.33350 6,000:$0.31050 15,000:$0.29900 30,000:$0.28750 75,000:$0.28290 150,000:$0.27600 |
SI4228DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 25V 8-SOIC | 2,500 | 2,500:$0.35000 5,000:$0.33250 12,500:$0.31875 25,000:$0.31000 62,500:$0.30000 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | 2 个 P 沟道(双) |
FET 特点: | 标准 |
漏极至源极电压(Vdss): | 60V |
电流 - 连续漏极(Id) @ 25° C: | 190mA |
开态Rds(最大)@ Id, Vgs @ 25° C: | 4 欧姆 @ 500mA,10V |
Id 时的 Vgs(th)(最大): | 3V @ 250µA |
闸电荷(Qg) @ Vgs: | 1.7nC @ 15V |
输入电容 (Ciss) @ Vds: | 23pF @ 25V |
功率 - 最大: | 250mW |
安装类型: | 表面贴装 |
封装/外壳: | SOT-563,SOT-666 |
供应商设备封装: | SC-89-6 |
包装: | 剪切带 (CT) |