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参数资料
| 型号： | EC1078B-G |
| 英文描述： | InGaP HBT Gain Block |
| 中文描述： | InGaP HBT增益模块 |
| 文件页数： | 2/4页 |
| 文件大小： | 132K |
| 代理商： | EC1078B-G |
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 2 of 4 April 2006
EC1078
InGaP HBT Gain Block
Product Information
The Communications Edge
TM
Typical Device RF Performance
Supply Bias = +7 V, Rbias = 14 Ω, Icc = 96 mA
Frequency
MHz
100
500
900
1900
2140
2400
3500
S21
dB
21.2
20.7
20
17.2
16.6
15.9
13.5
S11
dB
-13
-14
-15
-13
S22
dB
-11
-12
-11
-9.2
Output P1dB
dBm
+20
+20.6
+21
+20.5
+20
+19
Output IP3
dBm
+38
+37.5
+37
+33.5
+32.5
+32
Noise Figure
dB
3.4
3.5
3.8
3.9
1. Test conditions: T = 25 C, Supply Voltage = +7 V, Device Voltage = 5.6 V, Rbias = 14
Ω, Icc = 96 mA typical, 50 Ω System.
2. 3OIP measured with two tones at an output power of +7 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. The performance data does not
account for losses attributed to recommended input and output series resistances shown in the application circuit on page 3.
Gainvs. Frequency
0
5
10
15
20
25
30
012
34
56
Frequency(GHz)
Gain
(dB
)
S11, S22 vs. Frequency
-20
-16
-12
-8
-4
0
0123456
Frequency (GHz)
S
11,
S
22
(dB
)
S22
S11
Icc vs. Vde
0
40
80
120
160
200
024
6
8
Vde (V)
Icc
(mA
)
25°C
OIP3 vs. Frequency
20
25
30
35
40
500
1000
1500
2000
2500
3000
Frequency (MHz)
OIP3
(dBm
)
25°C
85°C
-40°C
Noise Figure vs. Frequency
2
3
4
5
6
500
1000
1500
2000
Frequency (MHz)
NF
(dB
)
P1dBvs. Frequency
12
16
20
24
500
1000
1500
2000
2500
3000
Frequency(MHz)
P1
dB
(dBm
)
25°C
85°C
-40°C
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