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参数资料
| 型号： | EC3H08B |
| 英文描述： | BJT |
| 中文描述： | 双极型晶体管 |
| 文件页数： | 1/2页 |
| 文件大小： | 20K |
| 代理商： | EC3H08B |
EC3H08B
HD Seigi 011023 matumiya-1/2
High-Frequency
Amp Applications, Osc. Applications
Features
Low noise : NF=1.6dB typ (f=2GHz).
High cut-off frequency : fT=10.0GHz typ (VCE=1V).
: fT=12.0GHz typ (VCE=3V).
Low operating voltage.
High Gain :
S21e2=9.5dB typ (f=2GHz)
Ultraminiature (1006 size) and thin (0.5mm) leadless
package.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to- Base Voltage
VCBO
9V
Collector-to-Emitter Voltage
VCEO
4V
Emitter-to-Base Voltage
VEBO
2V
Collector Current
IC
20
mA
Collector Dissipation
PC
80
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=5V, IE=0
1.0
A
Emitter Cutoff Current
IEBO
VEB=1V, IC=0
10
A
DC Current Gain
hFE
VCE=1V, IC=5mA
100
160
Gain-Bandwidth Product
fT(1)
VCE=1V, IC=3mA
8.0
10.0
GHz
fT(2)
VCE=3V, IC=7mA
10.0
12.0
GHz
Output Capacitance
Cob
VCB=1V, f=1MHz
0.4
0.55
pF
Reverse Transfer Capacitance
Cre
VCB=1V, f=1MHz
0.27
0.40
pF
Forward Transfer Gain
S21e2(1)
VCE=1V, IC=3mA, f=2GHz
8.0
9.5
dB
S21e2(2)
VCE=3V, IC=7mA, f=2GHz
9.0
10.5
dB
Noise Figure
NF
VCE=1V, IC=3mA, f=2GHz
1.6
2.5
dB
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : 0000000
EC3H08B
Package Dimensions
unit : mm
0000
[EC3H08B]
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
Preliminary
0.35
0.2
0.05
0.15
0.6
0.4
0.65
0.05
0.25
0.05
1.0
0.5
0.05
(Bottom view)
3
1
2
1 : Base
2 : Emitter
3 : Collector
SANYO : ECSP1006
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