参数资料
型号: ECG002F-PCB
英文描述: InGaP HBT Gain Block
中文描述: InGaP HBT增益模块
文件页数: 2/7页
文件大小: 254K
代理商: ECG002F-PCB
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 2 of 7 April 2006
ECG002
InGaP HBT Gain Block
Product Information
The Communications Edge
TM
Typical Device RF Performance
Supply Bias = +5 V, Rbias = 24 Ω, Icc = 45 mA
Frequency
MHz
100
500
900
1900
2140
2400
3500
5800
S21
dB
21
20.6
20
19.5
18.7
18.2
16.4
13.3
S11
dB
-18
-17
-15
-16
-19
S22
dB
-17
-18
-20
-21
-22
-35
-16
Output P1dB
dBm
+15.4
+15.6
+15.5
+15
+14.5
+11
Output IP3
dBm
+28
+29
Noise Figure
dB
3.9
3.8
3.9
1. Test conditions: T = 25 C, Supply Voltage = +5 V, Device Voltage = +3.9 V, Rbias = 24
Ω, Icc = 45 mA typical, 50 Ω System.
2. 3OIP measured with two tones at an output power of -1 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain vs. Frequency
12
14
16
18
20
22
500
1000
1500
2000
2500
3000
Frequency (MHz)
Gain
(dB
)
+25C
-40C
+85C
S11, S22 vs. Frequency
-40
-35
-30
-25
-20
-15
-10
-5
0
012
3456
Frequency (GHz)
S11,
S22
(dB
)
S22
S11
Vde vs. Icc
0
20
40
60
80
100
120
3.00
3.20
3.40
3.60
3.80
4.00
4.20
4.40
Vde (V)
Icc
(mA)
+25C
OIP3 vs. Frequency
24
26
28
30
32
500
1000
1500
2000
2500
3000
Frequency (MHz)
OI
P3
(dBm
)
+25C
-40C
+85C
Noise Figure vs. Frequency
2
2.5
3
3.5
4
4.5
500
1000
1500
2000
Frequency (MHz)
NF
(dB
)
P1dBvs. Frequency
10
12
14
16
18
20
500
1000
1500
2000
2500
3000
Frequency (MHz)
P1
dB
(dBm
)
+25C
-40C
+85C
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