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| 型号： | ECH8651R-TL-H |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 24V 10A ECH8 |
| 产品目录绘图： | ECH8 Package - P, N, N/P, Dual-N & Dual-P Channel Top |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 24V |
| 电流 - 连续漏极(Id) @ 25° C： | 10A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 14 毫欧 @ 5A，4.5V |
| 闸电荷(Qg) @ Vgs： | 24nC @ 10V |
| 功率 - 最大： | 1.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | 8-ECH |
| 包装： | 标准包装 |
| 产品目录页面： | 1537 (CN2011-ZH PDF) |
| 其它名称： | 869-1158-6 |
Ordering number : ENA1010A
ECH8651R
N-Channel Power MOSFET
24V, 10A, 14m Ω , Dual ECH8
Features
http://onsemi.com
?
?
?
?
Low ON-resistance
2.5V drive
Common-drain type
Protection diode in
?
?
?
Built-in gate protection resistor
Best suited for LiB charging and discharging switch
Halogen free compliance
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
24
±12
10
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
IDP
PD
PT
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm) 1unit
When mounted on ceramic substrate (900mm 2 × 0.8mm)
60
1.4
1.5
150
--55 to +150
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-003
Product & Package Information
? Package : ECH8
? JEITA, JEDEC : -
? Minimum Packing Quantity : 3,000 pcs./reel
Top View
2.9
ECH8651R-TL-H
Packing Type : TL
Marking
0.15
8
5
0 to 0.02
TL
WV
Lot No.
1
0.65
4
0.3
Electrical Connection
8
7
6
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
1
2
3
4
8 : Drain
Bottom View
ECH8
Semiconductor Components Industries, LLC, 2013
July, 2013
50912 TKIM/40908PE TIIM TC-00001313 No. A1010-1/7
相关PDF资料 |
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|---|---|
| ECH8652-TL-H | MOSFET P-CH 12V 6A ECH8 |
| ECH8653-TL-H | MOSFET N-CH DUAL 20V 7.5A ECH8 |
| ECH8655R-TL-H | MOSFET N-CH DUAL 24V 9A ECH8 |
| ECH8656-TL-H | MOSFET N-CH 20V 7.5A ECH8 |
| ECH8657-TL-H | MOSFET N-CH DUAL 35V 4.5A ECH8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ECH8651R-TL-HX | 功能描述:MOSFET NCH+NCH 2.5V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ECH8652 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| ECH8652_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ECH8652-TL-H | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ECH8653 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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