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参数资料
| 型号： | ECP050 |
| 文件页数： | 1/13页 |
| 文件大小： | 196K |
| 代理商： | ECP050 |
EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538
Phone: (510) 979-8999
Fax: (510) 979-8902
www.eiccorp.com
1
Revision D
SS-000522-000
ECP050
0.5WATT POWER AMPLIFIER
PRELIMINARY DATA SHEET
Electrical Specifications
Test Conditions: Ta = 25
oC, V
CC = +5 V Icq=250mA (class A operation)
1800 MHz - 2300MHz
28dBm P1dB
High Linearity: 45dBm OIP3
High Efficiency: PAE > 45%
15 dB of Linear Gain
Single 5V Supply
High Reliablility
Class A or AB operation
Features
Applications
Product Description
Basestations and Repeaters
CDMA/GSM/TDMA/EDGE
PCS/CDMA2000/IMT2000/UMTS
Multi-carrier systems
CAUTION!
SENSITIVE ELECTRONIC DEVICE
QFN-16 (4x4mm)
SOIC-8
Packages Available
The ECP050 is a single stage 0.5W power amplifier that offers excellent linearity and efficiency. This device was developed
using EiC’s proprietary InGaP Heterojunction Bipolar Transistor (HBT) process. The devices have partially matched input
impedance. It is optimized for multicarrier applications and allows customers to use class A or class AB operations. The
devices can be easily matched to obtain optimum power, linearity and efficiency. The product is targeted for use as a driver
amplifier for wireless infrastructure applications. It is available in two surface-mount plastic packages: QFN-16 (4x4mm) and
SOIC-8 slug.
MIN.
TYP.
MAX.
F
Frequency
1800
2300
MHz
f = 1960MHz
15.0
f = 2140MHz
14.0
f = 1960MHz
28.0
f = 2140MHz
27.0
f = 1960MHz
45.0
f = 2140MHz
44.0
ACPR1
Pout = 22dBm (IS-95)
f = 1960MHz
-45
dBc
9 ch. Fwd.
ACPR1
Pout = 20dBm (WCDMA)
f = 2140MHz
-45
dBc
Note 2
Gain Flatness (120MHz Band)
f = 2140MHz
±0.5
dB
RL in
Input Return Loss (50 Ohm)
f = 2000MHz
15.0
dB
Icop
Operational Current @ P1dB
290
mA
Vde
Device Voltage
5.0
Vdc
θjc
Thermal Resistance
60.0
°C/W
θja
Thermal Resistance (reference)
102.0
°C/W
Note 3
Note 3: For the recommended mounting solution please refer to APNOTE AP-000556-000.
Output Third Order Intercept
SYMBOL
OIP3
G
P1dB
Note 2: ACPR measured for 3GPP test model 1, 64 DPCH. Channel bandwidth = 3.84MHz. Frequency offset: +/- 5MHz.
Note 1: OIP3 = Pout (by power meter, total 2-tone power) + (IM3(dB))/2) - 3dB
Gain (Small Signal)
TEST CONDITION
LIMITS
UNIT
PARAMETER
Output Power @ 1dB
Compression
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ECP050D | 制造商:WJCI 制造商全称:WJCI 功能描述:1/2 Watt, High Linearity InGaP HBT Amplifier |
| ECP050D-G | 功能描述:射频放大器 1800-2300MHz 14dB Gain@1960MHz RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| ECP050D-PCB1960 | 功能描述:射频开发工具 1960MHz Eval Brd 14.3dB Gain RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| ECP050D-PCB2140 | 功能描述:射频开发工具 2140MHz Eval Brd 14.4dB Gain RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| ECP050G | 制造商:未知厂家 制造商全称:未知厂家 功能描述:1/2 Watt, High Linearity InGaP HBT Amplifier |
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