参数资料
型号: ED1502D
厂商: NXP SEMICONDUCTORS
元件分类: 小信号晶体管
英文描述: NPN general purpose transistor
中文描述: 25 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装: PLASTIC, SC-43, 3 PIN
文件页数: 3/8页
文件大小: 47K
代理商: ED1502D
1999 Apr 27
3
Philips Semiconductors
Product specication
NPN general purpose transistor
ED1502
THERMAL CHARACTERISTICS
Note
1. Refer to TO-92; SOT54 standard mounting conditions.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =40V
10
A
IE = 0; VCB = 20 V; Tj = 150 °C
5
A
IEBO
emitter cut-off current
IC = 0; VEB =4V
10
A
hFE
DC current gain
IC = 7 mA; VCE =10V
ED1502B
48
75
ED1502C
66
100
ED1502D
84
127
ED1502E
105
210
VBE
base-emitter voltage
IC = 7 mA; VCE = 10 V; note 1
925
mV
Cre
feedback capacitance
IC =ic = 0; VCB = 10 V; f = 1 MHz
0.5
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
361
825
MHz
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