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参数资料
| 型号： | EDB103 |
| 厂商： | RECTRON LTD |
| 元件分类： | 桥式整流 |
| 英文描述： | GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER |
| 中文描述： | 1 A, 150 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封装： | PLASTIC, DB-1, 4 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 224K |
| 代理商： | EDB103 |
GLASS PASSIVATED SUPER FAST
SILICON SURFACE MOUNT BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
EDB101
THRU
EDB106
DB-1
Dimensions in inches and (millimeters)
FEATURES
* Surge overload rating - 30 amperes peak
* Ideal for printed circuit board
* Reliable low cost construction utilizing molded
* Glass passivated device
* Polarity symbols molded on body
* Mounting position: Any
* Weight: 1.0 gram
* Good for automatic insertion
* UL listed the recongnized component directory,file #94233
* Epoxy: Device has UL flammability classification 94V-O
MECHANICAL DATA
MAXIMUM RATINGS (At TA = 25
oC unless otherwise noted)
ELECTRICAL CHARACTERISTICS (At TA = 25
oC unless otherwise noted)
2006-11
REV:B
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating and Storage Temperature Range
SYMBOL
VRRM
VDC
IO
IFSM
TJ,TSTG
VRMS
Volts
Amps
1.0
30
-55 to + 150
0
C
pF
UNITS
Maximum Average Forward Output Current at TA = 55
oC
50
150
200
100
300
400
35
105
140
70
210
280
Volts
Amps
EDB101
EDB103
EDB104
EDB102
EDB105
EDB106
EDB101
EDB103
EDB104
EDB102
EDB105
EDB106
50
150
200
100
300
400
DC Blocking Voltage per element
CHARACTERISTICS
V
trr
F
SYMBOL
IR
UNITS
1.05
1.35
1.70
100
m
Amps
nSec
m
Amps
at 1.0A DC
Maximum Forward Voltage
Maximum Reverse Recovery Time (Note 1)
Volts
@TA = 25
oC
@TA = 100
oC
5.0
R q J A
0
C/W
R q J L
Typical Thermal Resistance (Note 3)
Note: 1.Test Conditions: IF=0.5A,IR=-1.0A,IRR=-0.25A.
2.Measured at 1MHz and applied reverse voltage of 4.0 volts.
3.Thermal Resistance : Mounted on PCB.
38
12
50
CJ
Typical Junction Capacitance (Note 2)
15
10
Maximum Reverse Current at Rated
.205 ( 5.2 )
.195 ( 5.0 )
.165 ( 4.2 )
.155 ( 3.9 )
.135 ( 3.4 )
.115 ( 2.9 )
.335 ( 8.51 )
.320 ( 8.12 )
.350 ( 8.9 )
.300 ( 7.6 )
.245 ( 6.2 )
.255 ( 6.5 )
( 0.5 )
( 1.5 )
.020
.060
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相关代理商/技术参数 |
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|---|---|
| EDB103C | 功能描述:桥式整流器 1A 150V 50ns GP RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
| EDB103S | 功能描述:桥式整流器 DIPBridge,SM,GP DB-S,1A,150V,50ns RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
| EDB103SC | 功能描述:桥式整流器 1A 150V 50ns SM GP RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
| EDB103S-T | 功能描述:整流器 1A 150V 50ns SM GP RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| EDB103S-T-T | 功能描述:整流器 1A 150V 50ns SM GP RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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