参数资料
型号: EDI22AG27264V9D2
英文描述: 2x64Kx72, 3.3V Synchronous/Synchronous Burst SRAM Module(2x64Kx72, 3.3V,9ns,同步/同步脉冲静态RAM模块)
中文描述: 2x64Kx72,3.3同步/同步突发静态存储器模块(2x64Kx72,3.3伏,纳秒,同步/同步脉冲静态内存模块)
文件页数: 8/11页
文件大小: 231K
代理商: EDI22AG27264V9D2
EDI2AG27264V
1 Megabyte Sync/Sync Burst,
Small Outline DIMM
6
EDI2AG27264V Rev. 0 1/98 ECO#
Max
Description
SYM
Typ
8.5
9
10
12
Units
Power Supply Current
Icc1
1.55
1.2
1.1
1.0
A
Power Supply Current
Icc
700
950 800 750 700
A
Device Selected,No Operation
CMOS Standby
Icc3
200
300 300 300 300
mA
Clock Running-Deselect IccK
500
750 750 750 750
mA
DC Electrical Characteristics - Read Cycle
Parameter
Sym
Min
Typ
Max
Units
Supply Voltage
VCC 3.14
3.3
3.6
V
Supply Voltage
VSS
0.0
V
Input High
VIH
1.1
3.0
VCC+0.3 V
Input Low
VIL
-0.3
0.0
0.3
V
Input Leakage
ILi
-2
1
2
A
Output Leakage
ILo
-2
1
2
A
Recommended DC Operating Conditions
*Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions greater than those indicated
in operational sections of this specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Absolute Maximum Ratings*
Voltage on Vcc Relative to Vss
-0.5V to +4.6V
Vin
-0.5V to Vcc +0.5V
Storage Temperature
-55°C to +125°C
Operating Temperature (Commercial)
0°C to +70°C
Operating Temperature (Industrial)
-40°C to +85°C
Short Circuit Output Current
10 mA
AC Test Conditions
Input Pulse Levels
Vss to 3.0V
Input and Output Timing Ref.
1.25V
Output Test equivalencies
AC Test Load
Synchronous Only - Truth Table
DQ
Z
0 = 50 W
F ig . 1 O u tput L o ad Equiva lent
V t = 1.25V
50
W
Operation
E1\
E2\
GW\
G\
Z Z
C L K
DQ
Synchronous Write-Bank 1
L
H
L
H
L
High-Z
Synchronous Read-Bank 1
L
H
L
Synchronous Write-Bank 2
H
L
H
L
High-Z
Synchronous Read-Bank 2
H
L
H
L
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