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| 型号： | EDI2GG418128V10D |
| 英文描述： | 4x128Kx18, 3.3V Synchronous Flow-Through SRAM Card Module(4x128Kx18, 3.3V，10ns,同步静态RAM卡模块(流通结构）) |
| 中文描述： | 4x128Kx18，3.3V的同步流通过的SRAM卡模块（4x128Kx18，3.3伏，10纳秒，同步静态内存卡模块（流通结构）） |
| 文件页数： | 1/8页 |
| 文件大小： | 218K |
| 代理商： | EDI2GG418128V10D |
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White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
EDI2GG418128V
4x128Kx18, 3.3V Synchronous Flow-Through SRAM CARD EDGE DIMM
FEATURES
s 4x128Kx18 Synchronous
s Access Speed(s): TKHQV = 9.5, 10, 11, 12, 15ns
s Flow-Through Architecture
s Clock Controlled Registered Bank Enables (E1\, E2\, E3\, E4\)
s Clock Controlled Registered Address
s Clock Controlled Registered Global Write (GW\)
s Aysnchronous Output Enable (G\)
s Internally self-timed Write
s Gold Lead Finish
s 3.3V
±10%, -5% Operation
s Common Data I/O
s High Capacitance (30pF) drive, at rated Access Speed
s Single total array Clock
s Multiple Vcc and Vss
The EDI2GG418128VxxD2 is a Synchronous SRAM, 60 position
Card Edge; DIMM (120 contacts) module, organized as 4x128Kx64.
The module contains four (4) Synchronous Burst Ram Devices,
packaged in the industry standard JEDEC 14mmx20mm TQFP
placed on a Multilayer FR4 Substrate. The module architecture is
defined as a Synchronous Only, Flow-Through, Early Write De-
vice. This module provides high performance, ultra fast access
times at a cost per bit benefit over BiCMOS Asynchronous SRAM
based Devices. As well as improved cost per bit, the use of
synchronous, or synchronous Burst devices or modules can ease
the memory subsystem design by reducing or easing the memory
controller requirement.
Synchronous operations are in relation to an externally supplied
clock, registered address, registered global write, registered
enables as well as an Asynchronous Output enable. All read and
write operations to this module are performed on long words
(double words) 32 bit operation.
Write cycles are internally self timed and are initiated by a rising
clock edge. This feature relieves the designer the task of devel-
oping external write pulse width circuitry.
January 1999 Rev. 0
ECO# 10857
相关PDF资料 |
PDF描述 |
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| EDI2GG418128V11D | 4x128Kx18, 3.3V Synchronous Flow-Through SRAM Card Module(4x128Kx18, 3.3V，11ns,同步静态RAM卡模块(流通结构）) |
| EDI2GG41864V10D | 4x64Kx18 3.3V Synchronous SRAM Card Module(4x64Kx18, 3.3V，10ns,同步静态RAM卡模块(流通结构）) |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| EDI2GG464128V | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:4MB SYNCHRONOUS CARD EDGE DIMM |
| EDI2GG464128V10D | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:4MB SYNCHRONOUS CARD EDGE DIMM |
| EDI2GG464128V11D | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:4MB SYNCHRONOUS CARD EDGE DIMM |
| EDI2GG464128V12D | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:4MB SYNCHRONOUS CARD EDGE DIMM |
| EDI2GG464128V15D | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:4MB SYNCHRONOUS CARD EDGE DIMM |
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