- 您现在的位置：买卖IC网 > PDF目录93356 > EDI8F32259C 256Kx32 Static RAM CMOS, High Speed Module(256Kx8 CMOS高速静态RAM模块) PDF资料下载
参数资料
| 型号： | EDI8F32259C |
| 英文描述： | 256Kx32 Static RAM CMOS, High Speed Module(256Kx8 CMOS高速静态RAM模块) |
| 中文描述： | 256Kx32的CMOS静态RAM，高速模块（256Kx8的CMOS高速静态内存模块） |
| 文件页数： | 2/8页 |
| 文件大小： | 139K |
| 代理商： | EDI8F32259C |
EDI8F32259C
256Kx32 SRAM Module
2
EDI8F32259C Rev. 1 12/97 ECO #9619
Absolute Maximum Ratings*
Recommended DC Operating Conditions
(f=1.0MHz, VIN=VCC or VSS)
Parameter
Sym
Max
Unit
Address Lines
CI
60
pF
Data Lines
CD/Q
20
pF
Chip Enable Line
CC
20
pF
Write Control Line
CN
60
pF
These parameters are sampled, not 100% tested.
AC Test Conditions
*Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions greater than those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Parameter
Sym
Min
Typ
Max Units
Supply Voltage
VCC
4.5
5.0
5.5
V
Supply Voltage
VSS
0
V
Input High Voltage
VIH
2.2
-- VCC+0.3V V
Input Low Voltage
VIL
-0.3
--
0.8
V
(note: For TEHQZ,TGHQZ and TWLQZ, CL = 5pF)
Input Pulse Levels
VSS to 3.0V
Input Rise and Fall Times
5ns
Input and Output Timing Levels
1.5V
Output Load
1TTL, CL = 30pF
Voltage on any pin relative to VSS
-0.5V to 7.0V
Operating Temperature TA (Ambient)
Commercial.
0°C to +70°C
Industrial
-40°C to +85°C
Storage Temperature, Plastic
-55°C to +125°C
Power Dissipation
7.5 Watt
Output Current.
20 mA
E
W
G
Mode
Output
Power
H
X
Standby
HIGH Z
ICC3
L
H
L
Read
DOUT
ICC1
L
X
Write
DIN
ICC1
L
H
Output Deselect HIGH Z
ICC1
Truth Table
Capacitance
DC Electrical Characteristics
Parameter
Sym
Conditions
Min
Max Max Max
Max Units
10-12 15ns
20 25-35 ns
Operating Power Supply Current
ICC1
W, E = VIL, II/O = 0mA, Min Cycle
1360 1280 1440 1280 mA
Standby (TTL) Power Supply Current ICC2
E
≥ VIH, VIN ≤ VIL or VIN ≥ VIH
480 240 200
200
mA
Full Standby Power Supply Current
ICC3
E
≥ VCC-0.2V
80
40
mA
CMOS
VIN
≥ VCC-0.2V or VIN ≤ 0.2V
Input Leakage Current
ILI
VIN = 0V to VCC
--
±80 ±80 ±80
±80
A
Output Leakage Current
ILO
V I/O = 0V to VCC
--
±20 ±20 ±20
±20
A
Output High Voltage
VOH
IOH = -4.0mA
2.4
—
V
Output Low Voltage
VOL
IOL = 8.0mA
—
0.4
V
*Typical: TA = 25°C, VCC = 5.0V
相关PDF资料 |
PDF描述 |
|---|---|
| EDI8F3232C | 32Kx32 Static RAM CMOS, High Speed Module(32Kx32高速CMOS静态RAM模块) |
| EDI8F32512C | 512Kx32 Static RAM CMOS, High Speed Module(512Kx32高速CMOS静态RAM模块) |
| EDI8F3265C | 64Kx32 Static RAM CMOS, High Speed Module(64Kx32高速CMOS静态RAM模块) |
| EDI8F81024C | 1Megx8 Static RAM CMOS, Module(1Mx8 CMOS静态RAM模块) |
| EDI8F81025C | 1Megx8 Static RAM CMOS, Module(1Mx8 CMOS静态RAM模块) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| EDI8L32128C15AC (WPS128K32-15P | 制造商:Microsemi Corporation 功能描述:EDI8L32128C15AC (WPS128K32-15P - Bulk |
| EDI8L32128C15AI | 制造商:White Electronic Designs 功能描述:SRAM Chip Async Single 5V 4M-Bit 128K x 32 15ns 68-Pin PLCC 制造商:Microsemi Corporation 功能描述:EDI8L32128C15AI - Bulk |
| EDI8L32128C15AI (WPS128K32-15P | 制造商:Microsemi Corporation 功能描述:EDI8L32128C15AI (WPS128K32-15P - Bulk |
| EDI8L32128C20AC (WPS128K32-20P | 制造商:Microsemi Corporation 功能描述:EDI8L32128C20AC (WPS128K32-20P - Bulk 制造商:White Electronic Designs 功能描述:EDI8L32128C20AC (WPS128K32-20P - Bulk |
| EDI8L32128C20AI | 制造商:Microsemi Corporation 功能描述:EDI8L32128C20AI - Bulk |
发布紧急采购，3分钟左右您将得到回复。