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参数资料
| 型号： | EE-SG3 |
| 元件分类： | 开关 |
| 英文描述： | 3.6 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT |
| 文件页数： | 1/2页 |
| 文件大小： | 107K |
| 代理商： | EE-SG3 |
106
EE-SG3/EE-SG3-B Photomicrosensor (Transmissive)
Photomicrosensor (Transmissive)
EE-SG3/EE-SG3-B
■ Dimensions
Note:
All units are in millimeters unless otherwise indicated.
■ Features
Dust-proof model.
Solder terminal model (EE-SG3).
PCB terminal model (EE-SG3-B).
■ Absolute Maximum Ratings (Ta = 25°C)
Note: 1.
Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2.
The pulse width is 10 μs maximum with a frequency of
100 Hz.
3.
Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No.
Name
A
Anode
K
Cathode
C
Collector
E
Emitter
Dimensions
Tolerance
3 mm max.
±0.3
3
< mm ≤ 6
±0.375
6
< mm ≤ 10
±0.45
10
< mm ≤ 18
±0.55
18
< mm ≤ 30
±0.65
Unless otherwise specified, the
tolerances are as shown below.
Four, 1.5
Four, 0.5
Optical axis
Cross section AA
Four, 0.25
19
±0.1
25.4
±0.2
3.6
±0.2
7.62
±0.3
2.54
±0.3
2.54
0.8
0.6
1.2
13
Two, 3.2
±0.2
dia. holes
Item
Symbol
Rated value
Emitter
Forward current
IF
50 mA
(see note 1)
Pulse forward cur-
rent
IFP
1 A
(see note 2)
Reverse voltage
VR
4 V
Detector
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipa-
tion
PC
100 mW
(see note 1)
Ambient tem-
perature
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to 100°C
Soldering temperature
Tsol
260°C
(see note 3)
Item
Symbol
Value
Condition
Emitter
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Detector
Light current
IL
2 mA min., 40 mA max.
IF = 15 mA, VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
Collector–Emitter saturated volt-
age
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 30 mA, IL = 1 mA
Peak spectral sensitivity wave-
length
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time
tf
4 μs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read
Precautions on page 25.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| EE-SG3 | 制造商:Omron Electronic Components LLC 功能描述:OPTO SWITCH SLOTTED |
| EESG3B | 制造商:Omron Electronic Components LLC 功能描述:NON-AMPLIFIED SENSOR - Bulk 制造商:Omron Electronic Components LLC 功能描述:SENSR OPTO SLOT 3.6MM TRANS THRU 制造商:Omron Electronic Components LLC 功能描述:Photointerrupter Transmissive 3.6mm Phototransistor 4-Pin |
| EE-SG3B | 制造商:OK Industries 功能描述:SLOT SWITCH 3.6MM |
| EE-SG3-B | 功能描述:光学开关（透射型，光电晶体管输出） TRANS PCB TERM. RoHS:否 制造商:Omron Electronics 输出设备:Phototransistor 槽宽:3.4 mm 光圈宽度:0.5 mm 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电流: 安装风格:Through Hole 最大工作温度:+ 85 C 最小工作温度:- 25 C 封装: |
| EE-SG3-B | 制造商:Omron Electronic Components LLC 功能描述:OPTO SWITCH SLOTTED |
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