参数资料
型号: EE-SH3-C
厂商: Omron Electronics Inc-EMC Div
文件页数: 1/4页
文件大小: 258K
描述: SENSR OPTO SLOT 3.4MM TRANS THRU
标准包装: 50
检测距离: 0.134"(3.4mm)
检测方法: 可传导的
输出配置: 光电晶体管
电流 - DC 正向(If): 50mA
电流 - 集电极 (Ic)(最大): 20mA
电压 - 集电极发射极击穿(最大): 30V
响应时间: 4µs,4µs
安装类型: 通孔
封装/外壳: PCB 安装
包装: 散装
类型: 无放大
工作温度: -25°C ~ 85°C
其它名称: EESH3C
Photomicrosensor (Transmissive)   EE-SH3 Series   169
Photomicrosensor (Transmissive)
EE-SH3 Series
?SPAN class="pst EE-SH3-DS_2586461_6"> Dimensions
Note:All units are in millimeters unless otherwise indicated.
?SPAN class="pst EE-SH3-DS_2586461_6"> Features
"High-resolution model with a 0.2-mm-wide or 0.5-mm-wide sensing
aperture, high-sensitivity model with a 1-mm-wide sensing aperture,
and model with a horizontal sensing aperture are available.
"Solder terminal models: EE-SH3/-SH3-CS/-SH3-DS/-SH3-GS
"PCB terminal models: EE-SH3-B/-SH3-C/-SH3-D/-SH3-G
"RoHS Compliant.
?SPAN class="pst EE-SH3-DS_2586461_6"> Absolute Maximum Ratings (Ta=25?SPAN class="pst EE-SH3-DS_2586461_6">C)
Note:1. Refer to the temperature rating chart if the ambient tempera-
ture exceeds 25癈.
2. The pulse width is 10 ?/SPAN>s maximum with a frequency of 100Hz.
3. Complete soldering within 10 seconds.
?SPAN class="pst EE-SH3-DS_2586461_6"> Ordering Information
?SPAN class="pst EE-SH3-DS_2586461_6"> Electrical and Optical Characteristics (Ta = 25?SPAN class="pst EE-SH3-DS_2586461_6">C)
Internal Circuit
K
A
C
E
Terminal No. Name
A
Anode
K
Cathode
C
Collector
E
Emitter
Dimensions Tolerance
3 mm max.    
?.2
3 < mm d 6    
?.24
6 < mm d 10        ?.29
10 < mm d 18       ?.35
18 < mm d 30       ?.42
Four, 0.25
Two, C1.5
Four, R1
Matted
Center mark
Solder terminal
Cross section AA
PCB terminal
Cross section AA
19?.15
25.4
3.4?.2
2.54?.2
7.2?.2
7.2?.2
7.6?.3
6.2
10.2
Model Aperture (a x b)
EE-SH3(-B) 2.1 x 0.5
EE-SH3-C(S) 2.1 x 1.0
EE-SH3-D(S) 2.1 x 0.2
EE-SH3-G(S) 0.5 x 2.1
Unless otherwise specified, the
tolerances are as shown below.
wo, 3.2?.2
ia. holes
Item
Symbol   Rated value
Emitter    Forward current   I
F
50 mA (seenote 1)
Pulse forward current I
FP
1 A (seenote2)
Reverse voltage   V
R
4 V
Detector   CollectorEmitter
voltage
V
CEO
30 V
EmitterCollector
voltage
V
ECO
---
Collector current   I
C
20 mA
Collector dissipation P
C
100 mW (seenote 1)
Ambient tem-
perature
Operating
T
opr
25癈 to 85癈
Storage
T
stg
30癈 to 100癈
Soldering temperature
T
sol
260癈 (see note 3)
Description    Aperture (a x b)
Model
Photomicrosensor
(transmissive)
2.1 x 0.5
EE-SH3(-B)
2.1 x 1.0
EE-SH3-C(S)
2.1 x 0.2
EE-SH3-D(S)
0.5 x 2.1
EE-SH3-G(S)
Item
Symbol
Value
Condition
EE-SH3(-B)   EE-SH3-C(S)  EE-SH3-D(S)  EE-SH3-G(S)
Emitter  Forward voltage
V
F
1.2 V typ., 1.5 V max.
I
F
 = 30 mA
Reverse current
I
R
0.01 糀 typ., 10 糀 max.
V
R
 = 4 V
Peak emission wavelength  ?/DIV>
P
940 nm typ.
I
F
 = 20 mA
Detector Light current
I
L
0.5 to 14 mA typ. 1 to 28 mA typ. 0.1 mA min.   0.5 to 14 mA   I
F
 = 20 mA,
V
CE
 = 10 V
Dark current
I
D
2 nA typ., 200 nA max.
V
CE
 = 10 V, 0lx
Leakage current
I
LEAK
---
---
CollectorEmitter saturated
voltage
V
CE
(sat)
0.1 V typ., 0.4 V max.
---
0.1 V typ.,
0.4 V max.
I
F
 = 20 mA,
I
L
= 0.1 mA
Peak spectral sensitivity
wavelength
?/DIV>
P
850 nm typ.
V
CE
 = 10 V
Rising time
tr
4 約 typ.
V
CC
 = 5 V,
R
L
 = 100 ?
I
L
= 5 mA
Falling time
tf
4 約 typ.
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