参数资料
型号: EE-SX384
厂商: Omron Electronics Inc-EMC Div
文件页数: 1/4页
文件大小: 211K
描述: OPTO SENSOR 3.5MM DARK-ON TRANS
标准包装: 200
检测距离: 0.138"(3.5mm)
检测方法: 可传导的
输出配置: NPN - 开路集电极/暗光
安装类型: 通孔
电流 - 电源: 3.2mA
电源电压: 4.5 V ~ 16 V
封装/外壳: PCB 安装
其它名称: EESX384
Photomicrosensor (Transmissive)   EE-SX384/-SX484
191
Photomicrosensor (Transmissive)
EE-SX384/-SX484
?SPAN class="pst EE-SX384_2583832_6"> Dimensions
Note: All units are in millimeters unless otherwise indicated.
?SPAN class="pst EE-SX384_2583832_6"> Features
" Incorporates an IC chip with a built-in detector element and amplifier.
" Incorporates a detector element with a built-in temperature com-
pensation circuit.
" A wide supply voltage range: 4.5 to 16 VDC
" Directly connects with C-MOS and TTL.
" High resolution with a 0.5-mm-wide sensing aperture.
" Dark ON model (EE-SX384); Light ON model (EE-SX484)
" RoHS Compliant.
?SPAN class="pst EE-SX384_2583832_6"> Absolute Maximum Ratings (Ta = 25?SPAN class="pst EE-SX384_2583832_6">C)
Note: 1.  Refer to the temperature rating chart if the ambient temper-
ature exceeds 25癈.
2.  Complete soldering within 10 seconds.
?SPAN class="pst EE-SX384_2583832_6"> Ordering Information
?SPAN class="pst EE-SX384_2583832_6"> Electrical and Optical Characteristics (Ta = 25?SPAN class="pst EE-SX384_2583832_6">C)
Internal Circuit
Unless otherwise specified,
the tolerances are ?.2 mm.
Terminal No. Name
A
Anode
K
Cathode
V
Power supply
 
 (Vcc)
O
Output (OUT)
G
Ground (GND)
K
A
V
G
0
Cross section AA
Cross section BB
7 min.
Five, 0.5
Five, 0.25
2.5
8
5.5
0.5
0.5
5.5
1.25
1.25
Item
Symbol
Rated value
Emitter
Forward current
I
F
50 mA (see note 1)
Reverse voltage
V
R
4 V
Detector
Power supply voltage    V
CC
16 V
Output voltage
V
OUT
28 V
Output current
I
OUT
16 mA
Permissible output
dissipation
P
OUT
250 mW
(see note 1)
Ambient tem-
perature
Operating
T
opr
40癈 to 75癈
Storage
T
stg
40癈 to 85癈
Soldering temperature
T
sol
260癈 (see note 2)
Description
Model
Photomicrosensor (transmissive)
Dark ON
EE-SX384
Light ON    EE-SX484
Item
Symbol
Value
Condition
Emitter
Forward voltage
V
F
1.2 V typ., 1.5 V max.
I
F
 = 20 mA
Reverse current
I
R
0.01 糀 typ., 10 糀 max.
V
R
 = 4 V
Peak emission wavelength  ?/DIV>
P
940 nm typ.
I
F
 = 20 mA
Detector
Low-level output voltage
V
OL
0.12 V typ., 0.4 V max.
V
CC
 = 4.5 to 16 V, I
OL
 = 16 mA,
I
F
 = 0 mA (EE-SX384), I
F
 = 8 mA (EE-SX484)
High-level output voltage
V
OH
15 V min.
V
CC
 = 16 V, R
L
 = 1 k?
I
F
 = 8 mA (EE-SX384), I
F
 = 0 mA (EE-SX484)
Current consumption
I
CC
3.2 mA typ., 10 mA max.
V
CC
 = 16 V
Peak spectral sensitivity
wavelength
?/DIV>
P
870 nm typ.
V
CC
 = 4.5 to 16 V
LED current when output is OFF
I
FT
3 mA typ., 8 mA max.
V
CC
 = 4.5 to 16 V
LED current when output is ON
Hysteresis
15% typ.
V
CC
 = 4.5 to 16 V (see note 1)
Response frequency
f
3 kHz min.
V
CC
 = 4.5 to 16 V, I
F
 = 15 mA, I
OL
 = 16 mA (see note 2)
Response delay time
t
PLH
 (t
PHL
)
3 約 typ.
V
CC
 = 4.5 to 16 V, I
F
 = 15 mA, I
OL
 = 16 mA (see note 3)
Response delay time
t
PHL
 (t
PLH
)
20 約 typ.
V
CC
 = 4.5 to 16 V, I
F
 = 15 mA, I
OL
 = 16 mA (see note 3)
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